1) Ga source temperature
Ga源温度
1.
The results indicated that GaN particles in wurtzite structure were obtained at the Ga source temperature of 850℃.
结果表明:当Ga源温度为850℃时得到六方纤锌矿结构的GaN晶体颗粒。
2) Sulfur source temperature
硫源温度
1.
The influence of sulfur source temperature on CIS film properties was investigated.
采用电沉积-硫化法制备了CuInS2薄膜,考察了硫源温度对CuInS2薄膜微结构的影响,并分析了硫化过程中的反应动力学。
3) temperature of heat reservoir
热源温度
1.
Moreover, the influence of the temperature of heat reservoir on the performance of ferromagnetic magnetic Ericsson refrigeration cycle was investigated.
结合分子场理论和磁系统热力学知识,分析了回热式室温磁Ericsson制冷循环中热量和磁熵的关系,重点研究了热源温度对铁磁质磁Ericsson制冷循环性能的影响。
4) heating temperature
热源温度
1.
Contrastive experiment of DAR with different heating temperature and input power
DAR热源温度与输入功率的对比性实验
5) endogenesis GA
内源GA含量
1.
The results indicates that there is a significant positive correlation between content of endogenesis GA and stem growth of dentrobia in huoshan,as well as a significant negative correlation between content of endogenesis ABA and stem growth of dentrobiums in huoshan.
结果表明:霍山三种石斛茎高生长与内源GA含量呈显著正相关,与内源ABA含量呈显著负相关。
6) Gallium
[英]['ɡæliəm] [美]['gælɪəm]
Ga
1.
Density and Viscosity of Gallium Melt and Its Microstructure;
液态Ga的密度和黏度及其微观结构
2.
Gallium bearing ferrites with different gallium content were synthesized by oxidation of ferrous and gallium ions under alkaline condition and room temperature.
采用氧化-沉淀法在室温下合成了不同Ga含量的Ga取代磁铁矿,并对上述产物进行了IR,XRD,Mossbauer等谱学解析和磁滞回线的测量。
3.
The adsorption behavior of nanometer TiO_2 towards Gallium (Ga) Indium (In) and Thallium (Tl) was investigated with inductively coupled plasma atomic emission spectrometry (ICP-AES).
研究了纳米TiO2材料对Ga,In,Tl的吸附性能,考察了吸附动力学、最佳酸度、富集倍数和吸附容量,确定了待测金属离子的最佳吸附条件。
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条