1) channel carrier concentration
沟道载流子浓度
1.
Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET;
C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度
2) Carrier concentration
载流子浓度
1.
the relationship between two-wave coupling gain and carrier concentration in photorefractive LiNbO3 crystal is analyzed.
测量了不同Ｃｅ掺杂浓度Ｃｅ：ＬｉＮｂＯ３晶体二波耦合指数增益与载流子浓度的关系，实验结果与理论分析一致。
2.
37×10-4Ω·cm,carrier concentration of 1.
本研究中用电阻加热反应蒸发的方法制备ITO薄膜,测试了膜的厚度、电阻率、可见光透过率、载流子浓度和迁移率,讨论薄膜的厚度对薄膜光电性能的影响。
3) carrier density
载流子浓度
1.
Based on coupling-wave equation,two-segment DFB lasers have been analyzed,and implicit expression of their carrier density and emission wavelength has been obtained.
利用耦合波方程 ,对两段式DFB激光器进行理论分析 ,得出了激光器激射工作时两段载流子浓度和激射波长之间所满足的隐含表达式。
4) CHC
沟道热载流子
1.
Then, it is investigated that the interaction of the two reliability problems CHC and ESD in VLSI.
重点讨论了超大规模集成 (VL SI)中两个可靠性问题沟道热载流子 (CHC)退化与静电释放 (ESD)之间的相互作用 ,特别是漏 /源工艺上的均衡和潜在的损伤。
5) sheet carrier concentration
方块载流子浓度
1.
The experimental results indicated that with increasing the annealing temperature, the sheet carrier concentration decreased, and the Hall mobility increased rapidly.
发现在650-850℃温度范围内,随着退火温度的升高,样品的方块载流子浓度呈下降趋势,而载流子迁移率呈明显上升的趋势。
6) minority carrier concentration
少数载流子浓度
1.
In this paper the minority carrier concentration is calculated analytically with the varying of the temperature T,Ge fraction x and doping concentration.
采用解析的方法计算了少数载流子浓度与Ge组分x、温度T以及掺杂浓度N的关系。
2.
In this paper, the intrinsic carrier concentration, the minority carrier concentrationand the ratio of hole concentration to impurity concentration are calculated analyticallywith the varing of the temperature T, Ge fraction x and doping concentration.
本文在前人研究的基础上，利用解析方法研究了应变Si_(1-x)Ge_x层中本征载流子浓度、少数载流子浓度、p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系。
补充资料：本征载流子浓度（intrinsiccarrierconcentration）
本征载流子浓度（intrinsiccarrierconcentration）
本征半导体材料中自由电子和自由空穴的平衡浓度。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条