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1)  specific contact resistance
比接触电阻率
1.
The specific contact resistance ( ρ _c) of annealed Ti films on n-type 3C-SiC was measured using two kinds of.
用两种不同的传输线模型对Ti/3C-SiC欧姆接触的ρc(比接触电阻率)进行测量,在750°C退火后Ti/3C-SiC的ρc达到了最低值为3。
2)  specific contact resistance
比接触电阻
1.
Accurate calculation of the specific contact resistance for Ni based Ohmic Contacts to the N-type SiC;
N型Ni基SiC欧姆接触比接触电阻的精确求解
2.
The specific contact resistance of 6.
94×10-7·cm2的比接触电阻。
3.
The specific contact resistance ρc of n+ polysilicon contact to n-type 4H-SiC as low as 3.
得到的n+多晶硅/n-SiC欧姆接触的比接触电阻为3。
3)  specific contact resistivity
比接触电阻
1.
The best result obtained for specific contact resistivity is 2.
对于n+-SiC/Ti/Pt接触系统,通过合金实验得到最优的欧姆接触制备条件,得到最小的比接触电阻为2。
2.
A minimum specific contact resistivity of 1.
当Ti(10nm)/Al(100nm)/Ni(40nm)/Au(100nm)金属体系在650℃高纯N2气氛中退火30s时,测量得到的最小比接触电阻率为1。
4)  specific contact resistance
接触电阻率
1.
Calculation of specific contact resistance in ohmic contacts;
欧姆接触中接触电阻率的计算
2.
But Ohmic contacts on p-type GaN with low specific contact resistance are more difficult to realize than those on n-type GaN.
本文介绍了利用金属Au、Cr/Au在p型GaN材料上做了接触性能研究,通过退火等实验获得了较理想的欧姆接触,测试后计算出Au、Cr/Au与p型GaN材料间的接触电阻率分别为7。
3.
The measurements of the specific contact resistance ( ρ c) were carried out for Ti/Au ohmic contact to heavily boron\|doped p\|diamond (~10 20 cm -3 ) by the transmission line model (TLM).
采用传输线模型测量了重B掺杂 p型金刚石薄膜 (约 10 2 0 cm-3 )上Ti/Au欧姆接触电阻率 ρc,测试了 5 0 0℃退火前后及大电流情况下的I V特性 ,研究了退火对 ρc 的影响 。
5)  contact resistivity
接触电阻率
1.
0×10~(18)cm~(-3)),the experi- ment shows that the contact resistivity keeps unchanged and shows good temperature reliability when the stor- age temperature under 300℃during the storage time of 0~24 hours;but the ohmic contact has shown evi- dent degeneration after the storage at 300℃for 24 hours and at 500℃for 24 hours respectively.
0×10~(18)cm~(-3))的欧姆接触特性,试验结果标明,当测量温度低于300℃时,存储时间为0~24h,其接触电阻率基本不变,表现出良好的温度可靠性;分别经过300、500℃各24h高温存储后,其欧姆接触发生了较为明显的退化,且不可恢复。
2.
To obtain ohmic contact to n-GaN with a low contact resistivity, Cr/Au/Ni/Au metallic system that was fabricated in n-GaN materials has been developed.
为了获得n-GaN的低接触电阻的欧姆接触,采用Cr/Au/Ni/Au金属化系统与n—GaN形成欧姆接触,并对其不同温度下的接触电阻率进行了测试分析。
3.
The best alloying temperature is 220℃ and contact resistivity exhibited about 6.
研究了Ag/AuGeNi/n-GaSb在150℃一450℃下合金处理对欧姆接触的影响,最佳合金温度为220℃,此时接触电阻率为6。
6)  measurement of ohmic contact resistivity
接触电阻率测量
补充资料:电导率(见电阻率)


电导率(见电阻率)
conductivity

d!日nd日O}已电导率(eonduetivity)见电阻率。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条