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1)  silicon island
硅岛
1.
A design principle of the diaphragm for microfabricated resonant pressure sensor was present, based on the deformation and stress distribution of square diaphragm,two kinds of square diaphragm with silicon islands were developed as well.
最后,就压力敏感膜片的工艺设计进行了探讨,认为采用正方形凸角补偿结构的〈110〉硅岛和采用边长补偿的〈100〉硅岛最适合间接连接式压力敏感膜片。
2)  Silicon island-diaphragm
硅岛膜
3)  Kyusyu Silicon Island
九州硅岛
1.
The Development of Kyusyu Silicon Island and Japan’s Industrial Cluster Strategies;
九州硅岛的发展与日本产业集群计划
4)  anti doped silicon island
异型硅岛
1.
A novel structure,which is implemented by anti doped silicon island to realize fully depletion in thick film SOI MOSFET,is proposed in this paper and the relationship between its performance and structure key parameters is analyzed.
本文提出了用异型硅岛实现的厚膜全耗尽 (FD)SOIMOSFET的新结构 ,并分析了其性能与结构参数的关系 。
5)  silicon island density
硅岛密度
1.
The results indicate that low dose S IMOX wafers have good superficial silicon layer with low threading dislocation d ensity,uniform BOX with low silicon island density and a sharp Si/SiO 2 interf ace.
结果显示 ,选择恰当的剂量能量窗口 ,低剂量 SIMOX圆片表层 Si单晶质量好、线缺陷密度低埋层厚度均匀、埋层硅岛密度低且硅 /二氧化硅界面陡峭 。
6)  silicon island array
硅岛阵列
1.
Then a silicon island array supporting structure is manufactured by deep etching process.
首先利用传统的光刻胶热熔工艺制作了平面微透镜阵列,然后利用深刻蚀(ICP)制作了一种硅岛阵列支撑结构,在硅岛上涂覆一层聚酰亚胺,并固化,形成柔性的结构。
补充资料:二氯二甲基硅烷与二氯二苯基硅烷、三氯甲基硅烷、三氯苯基硅烷和三氯苯基硅烷的聚合物
CAS:28630-33-3
分子式:(C12H10Cl2Si·C6H5Cl3Si·C2H6Cl2Si·CH3Cl3Si)x
中文名称:二氯二甲基硅烷与二氯二苯基硅烷、三氯甲基硅烷、三氯苯基硅烷和三氯苯基硅烷的聚合物
英文名称:Silane, dichlorodimethyl-, polymer with dichlorodiphenylsilane, trichloromethylsilane and trichlorophenylsilane silane, dichlorodimethyl-, polymer with dichlorodiphenylsilane, trichloromethyl
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