SiO_2栅介质,SiO2 gate insulator,音标,读音,翻译,英文例句,英语词典

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1) SiO2 gate insulator 点击朗读

SiO_2栅介质

2) SiO_2 Dielectric Material 点击朗读

SiO_2介质材料

例句>>

3) SiO_xN_y gate dielectrics 点击朗读

SiOxNy栅介质

4) gate dielectric 点击朗读

栅介质

In this paper, the carrier mobility, source voltage, current in channel, and avalanche generation under the gate dielectric of VDSM n-channel Si-MOSFET are analyzed by changing the gate voltage, the source voltage, the drain voltage and the thickness of gate oxide.

通过改变Si-MOSFET的栅电压、源电压、漏电压和栅氧化层厚度等参数,分析和求解栅介质下载流子迁移率、沟道内电流密度、电场、雪崩产生密度以及隧穿电流的变化,得出当源、漏偏压分别为0。

The reliability of strain silicon,gate dielectric and copper interconnection are discussed,and some new researches are presented.

简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。

The method of modulating the gate dielectric growth,the intrinsic gettering technique and low temperature annealing technique were applied to eliminate harmful backgrounds.

对电荷耦合器件(CCD)交流成像中存在的背景发白、亮条、亮点、拖影和固定图像噪声等不良背景进行了分析,并提出了调整栅介质生长方法、本征吸杂、低温退火等消除不良背景的具体工艺方法,获得了高质量的CCD器件。

更多例句>>

5) dielectric grating 点击朗读

介质栅

Characteristics of electromagnetic band-gap structure with stratified crossed dielectric gratings;

交错叠层型介质栅电磁带隙结构的特性

A new type of dielectric grating waveguide filter based on left-handed material(LHM) was proposed and its band-rejected characteristics were carefully analyzed by a method which combines the rigorous mode matching procedure with multimode network method.

提出了一种新型的基于左手介质的介质栅波导阻带滤波结构,并采用多模网络与严格模匹配相结合的方法,对该左手介质栅波导阻带滤波特性进行仔细严格的分析;给出了主模的B rillou in图,以及滤波结构的归一化中心频率、阻带的宽度和带内最大衰减等特性和结构参数的关系,并与传统右手介质栅波导作了比较,说明了产生两者不同特性的原因。

更多例句>>

6) SiO2 gate dielectrics 点击朗读

SiO2栅介质

Some problems of SiO2 gate dielectrics, requirements for high k materials as MOSFET gate dielectrics and the latest development of high k gate dielectrics instead of traditional SiO2 were reviewed.

综述了超薄SiO2栅介质层引起的问题、MOS栅介质层材料的要求、有希望取代传统SiO2的高k栅介质材料的研究进展。

补充资料：acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este

CAS：13170-23-5
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

参考词条

Al2O3栅介质双介质栅栅介质层栅介质击穿高K栅介质栅介质薄层

MOSFET栅介质介质光栅 HfO_2栅介质 HfO2栅介质

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	您的位置：首页 -> 词典 -> SiO_2栅介质 1) SiO2 gate insulator SiO_2栅介质 2) SiO_2 Dielectric Material SiO_2介质材料例句>> 3) SiO_xN_y gate dielectrics SiOxNy栅介质 4) gate dielectric 栅介质 1. In this paper, the carrier mobility, source voltage, current in channel, and avalanche generation under the gate dielectric of VDSM n-channel Si-MOSFET are analyzed by changing the gate voltage, the source voltage, the drain voltage and the thickness of gate oxide. 通过改变Si-MOSFET的栅电压、源电压、漏电压和栅氧化层厚度等参数,分析和求解栅介质下载流子迁移率、沟道内电流密度、电场、雪崩产生密度以及隧穿电流的变化,得出当源、漏偏压分别为0。 2. The reliability of strain silicon,gate dielectric and copper interconnection are discussed,and some new researches are presented. 简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。 3. The method of modulating the gate dielectric growth,the intrinsic gettering technique and low temperature annealing technique were applied to eliminate harmful backgrounds. 对电荷耦合器件(CCD)交流成像中存在的背景发白、亮条、亮点、拖影和固定图像噪声等不良背景进行了分析,并提出了调整栅介质生长方法、本征吸杂、低温退火等消除不良背景的具体工艺方法,获得了高质量的CCD器件。更多例句>> 5) dielectric grating 介质栅 1. Characteristics of electromagnetic band-gap structure with stratified crossed dielectric gratings; 交错叠层型介质栅电磁带隙结构的特性 2. A new type of dielectric grating waveguide filter based on left-handed material(LHM) was proposed and its band-rejected characteristics were carefully analyzed by a method which combines the rigorous mode matching procedure with multimode network method. 提出了一种新型的基于左手介质的介质栅波导阻带滤波结构,并采用多模网络与严格模匹配相结合的方法,对该左手介质栅波导阻带滤波特性进行仔细严格的分析;给出了主模的B rillou in图,以及滤波结构的归一化中心频率、阻带的宽度和带内最大衰减等特性和结构参数的关系,并与传统右手介质栅波导作了比较,说明了产生两者不同特性的原因。更多例句>> 6) SiO2 gate dielectrics SiO2栅介质 1. Some problems of SiO2 gate dielectrics, requirements for high k materials as MOSFET gate dielectrics and the latest development of high k gate dielectrics instead of traditional SiO2 were reviewed. 综述了超薄SiO2栅介质层引起的问题、MOS栅介质层材料的要求、有希望取代传统SiO2的高k栅介质材料的研究进展。补充资料：acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este CAS：13170-23-5 分子式：C12H24O6Si 分子质量：292.40 沸点：102℃(5 t 中文名称：二叔丁氧二乙酰氧基硅英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester di-tert-Butoxydiacetoxysilane di(tert-butoxy)diacetoxy-Silane acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este di-t-butoxydiacetoxysilane Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester Silane,di(tert-butoxy)diacetoxy- 说明：补充资料仅用于学习参考，请勿用于其它任何用途。参考词条 Al2O3栅介质双介质栅栅介质层栅介质击穿高K栅介质栅介质薄层

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