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1)  combined strain-buffer layer
复合应力缓冲层
1.
8)As and x ML GaAs combined strain-buffer layer were investigated systematically by photoluminescence(PL) and atomic force microscopy(AFM).
8As和xML GaAs的复合应力缓冲层上生长的InAs/GaAs自组织量子点的发光特性和表面形貌。
2)  stain-reducing layer
应力缓冲层
1.
We found that by introducing an InAlAs/InGaAs combination stain-reducing layer can let the red-shifting of the emission wavelength, increase the difference between ground and excited states, but the density of the QDs still too low.
用分子束外延(MBE)生长了含应力缓冲层的InAs量子点激光器。
3)  composite buffer layer
复合缓冲层
4)  strain buffer layer
应变缓冲层
5)  stress relaxation layer
应力缓和层
1.
The comparison analysis of the experiments show that the activated filler metal with the addition of Ti is suitable to directory brazing of Si3N4/steel, and adopting right stress relaxation layer and seal configuration will increase the joint strength obviously.
表明,含Ti活性钎料适用于Si3N4/钢的直接钎焊;合适的应力缓和层的选择以及套封结构的使用均能明显提高钎接接头强度。
6)  Stress absorbed layer
应力缓解层
补充资料:缓冲层
分子式:
CAS号:

性质:斜交轮胎胎面与胎体之间的胶布层或胶层。其主要作用是缓和外来冲击,防止外层胶的龟裂直接抵达胎体帘布层,并承受轮胎在行驶时或突然停止时,由于惯性作用而产生的剪切应力。为此,它应具有较好的导热性、耐老化性、多次变形下的耐疲劳性和低生热性及耐热性等。所用的帘线强度必须高于胎体帘线。

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