1) Process induced stress
工艺诱生应力
2) Process induced defect
工艺诱生缺陷
3) prestressing techniques
预应力工艺
4) stress-induced voiding
应力诱生空洞
1.
Finite element analysis and focused-ion beam techniques have been used to study the stress-induced voiding in the Cu interconnects with vias of 500 and 350 nm in diameter.
在200℃温度下进行了700h双层铜互连(M1/M2)的应力迁移加速老化试验,结合有限元分析和聚焦离子束(focused-ion-beam,简称FIB)技术研究了通孔直径分别为500和350nm的铜互连应力诱生空洞失效现象,探讨了应力诱生空洞的形成机理,并分析了通孔尺寸对铜互连应力迁移的影响。
2.
A stress-induced voiding model based on the Nabarro-Herring mechanism has been proposed.
提出了一种基于扩散-蠕变机制的空洞生长模型,结合应力模拟计算和聚焦离子束分析技术研究了Cu互连应力诱生空洞失效现象,探讨了应力诱生空洞的形成机制并分析了空洞生长速率与温度、应力梯度和扩散路径的关系。
5) stress induced leakage current
应力诱生漏电流
1.
Generation mechanism of stress induced leakage currentin flash memory cell;
闪速存储器中应力诱生漏电流的产生机理
6) Substrate induced stress
衬底诱生应力
1.
Substrate induced stress,process induced stress and use of different substrate orientations are major techniques that can significantly enhance carrier mobility.
衬底诱生应力、工艺诱生应力和采用不同的衬底晶向等三类方法都可以显著提高载流子的迁移率。
补充资料：轧辊残余应力(见轧辊应力)
轧辊残余应力(见轧辊应力)
residual stresses in roll
zhagun eanyu yingli轧辊残余应力(residual stresses in roll)见礼辐应力。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条