1) GaN nanotubes
GaN纳米管
1.
Synthesis of GaN nanotubes through nitriding ZnO/Ga_2O_3 film;
氮化ZnO/Ga_2O_3薄膜合成GaN纳米管
2) GaN nanorods
GaN纳米棒
1.
GaN nanorods were successfully synthesized through the reaction of Ga2O3 gel with NH3 at 1 000℃ by a simple and efficient sol-gel process.
采用简单、有效的sol-gel法在1 000℃时通过氧化镓凝胶和氨气反应成功合成了GaN纳米棒。
2.
GaN nanorods were grown by metal organic chemical vapor deposition(MOCVD)with Ni(NO3)2 as the catalyst precursor and trimethyl gallium and high purity blue ammonia as the Ga and N sources,respectively,on Si(111)substrates.
本文分别用三甲基镓和高纯蓝氨作为Ga源和N源,Ni(NO3)2作为催化剂,在Si(111)衬底上制得针尖状GaN纳米棒。
3) GaN nanowires
GaN纳米线
1.
Synthesis of GaN nanowires by ammoniating sputtered Ga_2O_3/Co films on Si substrates;
氨化Si基Ga_2O_3/Co薄膜制备GaN纳米线
2.
Synthesis of GaN nanowires through ammoniating Ga_2O_3/Nb thin films;
氨化Ga_2O_3/Nb薄膜制备GaN纳米线
3.
Synthesis of Mg-doped GaN nanowires by Au catalysis on Si substrates
Si基Au催化合成镁掺杂GaN纳米线
4) GaN nanowire
GaN纳米线
1.
Under a non-space confinement condition,GaN nanowires with diameters of about 10-50nm were synthesized on LaAlO 3 substrates by using a simple gas reaction method.
用简单化学反应的方法 ,采用非空间限制的条件 ,成功地在LaAlO3 衬底上制备了GaN纳米线。
5) GaN nanostrips
GAN纳米带
6) nano GaN
纳米GaN
1.
Deficiency of nitrogen in nano GaN particles, synthesized by using dc arc plasma method, results in N vacancies.
直流放电等离子法制备纳米GaN颗粒中的氮缺乏可导致空位形成。
补充资料：管状定向碳纳米管
纳米本意是一种长度单位,纳米材料是指材料的尺寸处于1~100nm范围内的金属,金属化合物,无机物或高分子的颗粒,对纳米材料的研究和开发依赖于能看清原子或分子世界的仪器,1993年12月中国科学院庞世瑾教授在硅表面搬走了原子,写下了"中国"的字样,人类按需要排布一个个原子的技术成为现实,前不久,我国科学家成功合成了3nm长的管状定向碳纳米管,长度居世界之首,这种碳纤维具有强度高,刚度(抵抗变形的能力)高,密度小,熔点高,化学稳定性好的特点.
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条