1) ZnSe epilayer
ZnSe外延膜
1.
High quality ZnSe epilayers on Si(111) substrate were obtained at 300°C by LP-MOCVD, in which hydrogen seleniu.
通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量。
2) ZnSe thin film
ZnSe薄膜
1.
The investigations of ZnSe thin film as a buffer and window material in CIS solar cell deposited by vacuum evaporation was discribed in this paper.
本文用真空蒸发法制备了CIS太阳能电池中做缓冲材料的ZnSe薄膜,利用X射线光电子能谱(XPS)对制备薄膜的表面化学状态及沉积质量进行了研究,并用氩离子溅射进行剥蚀,逐层分析薄膜的化合态随深度的变化关系。
2.
ZnSe thin film were preparated by vacuum evaporation.
本文采用单源真空蒸发法制备了ZnSe薄膜,利用电子探针、X射线粉晶衍射等现代测试手段研究了蒸发温度(700~1050℃)、基片温度(0~200℃)、基片材料(单晶硅、玻璃)以及热处理温度(300~400℃)等因素的改变对ZnSe薄膜的成份和结构的影响规律,建立了单源真空蒸发沉积ZnSe薄膜及热处理的实验方法。
3.
In the paper, we have obtained nonlinear absorption coefficient and nonlinear refractive index as a function using transmission spectra for ZnSe thin film.
报道了用常压MOCVD生长的Znse薄膜的光学非线代在77K下用纳秒脉冲激光观测到ZnSe薄膜的增强吸收光双稳特性非线性机理可能是由激子Coulomb相互作用屏蔽引起
3) ZnSe film
ZnSe薄膜
1.
The Research progress on electrodeposited ZnSe film overseas is summarized,especially electrochemical formation of ZnSe film from acidic aqueous solutions and electrodeposition of n-type and p-type ZnSe film.
综述了国外电沉积制备ZnSe薄膜的研究进展,尤其是在酸性电解液溶液中电沉积制备ZnSe薄膜、电沉积掺杂制备p型和n型ZnSe薄膜,且阐述了电沉积ZnSe薄膜材料的特性和机理,对其前景进行展望,提出了今后的重点研究方向。
2.
A modified chemical activated hot wall expitaxy method was used to grow ZnSe films on Si(111) substrates using Zn and Se sources.
采用SEM、AFM、EDS和PL谱技术研究了生长的ZnSe薄膜的形貌、成分和发光特性。
3.
This paper deals with a theoretical analysis of the feasibility that ZnSe films are co-deposited in ZnSO4 and Na2SeO3 acidic solution by electrochemistry,and then carries out a series of experiments on the ZnSe thin film in zinc sulfate and in the selenite sodium electrolyte solution.
在硫酸锌和亚硒酸钠的酸性柠檬酸钠电解液体系中进行ZnSe薄膜生长条件系列实验,为了进一步研究电化学沉积参数对薄膜成分和形貌的影响,采用正交试验方法,对pH值、离子的浓度比、电流密度、络合剂、温度等沉积参数进行了进一步详细研究,得到了最佳电化学沉积参数;最后,用分光光度计、扫描电子显微镜(SEM)和X-射线衍射仪(XRD)对薄膜的成分、形貌和结构进行分析和表征,表明该薄膜的化学计量比接近1∶1。
4) ZnSe thin films
ZnSe薄膜
1.
Influences of deposition temperature and rate on mechanical stress of electron beam deposited ZnSe thin films
沉积温度和速率对电子束沉积ZnSe薄膜应力特性的影响
2.
Donding of interfaces atoms in epitaxial growth of ZnSe thin films on Si(001) substrate
Si(001)外延ZnSe薄膜界面原子的结合与成键
3.
ZnSe thin films are prepared by vacuum evaporation on glass substrate.
实验还发现,适度的轻掺杂Nd可增加ZnSe薄膜的光透射性。
5) epitaxial films
外延薄膜
1.
Investigation on interface structure of Ba_(0.7)Sr_(0.3)TiO_3/YBa_2Cu_3O_(7-δ) epitaxial films on (001) SrTiO_3 substrate;
本文利用透射电子显微学和高分辨电子显微学研究了SrTiO3衬底上的Ba0 7Sr0 3TiO3 YBa2Cu3O7-δ(BST YBCO)外延薄膜的界面结构。
6) GaN epitaxial film
GaN外延膜
补充资料：hot-pressed polycrystalline zinc selenide ceramics ZnSe
分子式：
CAS号：
性质：一种红外光学陶瓷。密度5.27g/cm3。热膨胀系数7.7×10-6℃-1。不溶于水。折射率很高，在5μm波长处为2.4，红外透过波段较宽，为1～21μm。采用热压烧结法制备。用于红外透过窗、红外激光雷达密封罩等。
CAS号：
性质：一种红外光学陶瓷。密度5.27g/cm3。热膨胀系数7.7×10-6℃-1。不溶于水。折射率很高，在5μm波长处为2.4，红外透过波段较宽，为1～21μm。采用热压烧结法制备。用于红外透过窗、红外激光雷达密封罩等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条