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1)  grooved-gate NMOSFET
槽栅NMOSFET
2)  trench gate
槽栅
1.
In this article, a fully self aligned trench gate IGBTs(Insulated Gate Bipolar Transistors) with process simplification scheme is designed and fabricated with total of two masks which is the least of IGBT fabrication today.
本文设计了一种全自对准的槽栅 IGBT(绝缘栅双极晶体管 )结构 ,其工艺简单 ,全套工艺只有两张光刻版 ,是现有 IGBT工艺中最少的 ,而且两次光刻之间没有套刻关系 ,避免了套刻误差 ,提高了工艺成品率。
3)  cascade with slot
开槽叶栅
1.
The effect of slot inlet angle and turning angle on flow field characteristic of cascade with slot was studied numerically.
数值模拟了槽道进气角和转折角对开槽叶栅流场特性的影响。
4)  gate recess etching
栅挖槽
1.
35 μm gate-length GaAs power PHEMT has been fabricated by improving the processes of device structure and gate recess etching.
35μm的GaAs功率PHEMT,其中对器件结构、栅挖槽等工艺进行了改进。
5)  groove-gate MOSFETs
槽栅器件
1.
The groove-and planar-gate MOSFETs are compared and analyzed through simulation with the software SIVALCO,and the results show that the groove-gate MOSFETs can suppress short channel and hot carries effects.
采用SIVALCO软件对槽栅与平面器件进行了仿真对比分析,结果表明槽栅器件能够有效地抑制短沟道及热载流子效应,而拐角效应是槽栅器件优于平面器件特性更加稳定的原因。
6)  grooved gate pMOSFET
槽栅pMOSFET
1.
The influence of doping density on the short-channel-effect immunity in the deep-sub micron grooved gate PMOSFET;
深亚微米槽栅PMOSFET短沟道效应的模拟研究
2.
1μm SOI grooved gate pMOSFET with 5.
制造了栅长0·1μm,栅氧厚度5·6nm,栅槽180nm的SOI槽栅pMOSFET。
3.
Based on the hydrodynamic energy transport model, the influence of the channel doping density on the performance for the deep sub micron grooved gate PMOSFET is studied using the two dimensional device simulator MEDICI and compared to that of the counterpart conventional planar device.
利用二维器件仿真软件MEDICI,基于动力学能量输运模型对沟道掺杂浓度不同的深亚微米槽栅PMOSFET的特性进行了研究 ,并与相应平面器件的特性进行了对比 。
补充资料:X线滤线栅半径


X线滤线栅半径


  放射学术语。又称栅-焦距。呈弧形排列的滤线栅铅条与充填物高度的延长线于空间聚焦为一点,此聚焦点到栅平面的垂直距离为栅-焦距。用于聚焦式滤线栅。栅-焦距有75、90、100、120、200cm 几种。使用聚焦式滤线栅时,原则
  
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