1) tunneling ionization
隧穿电离
1.
By considering two different ionization mechanisms: the tunneling ionization regime and the over the barrier ionization regime, it is found that the ionization behaviors are quite similar, while the high harmonic generation behaviors are very different.
通过讨论两种不同的电离机制 :隧穿电离机制和过势垒电离机制 ,发现电离变化的规律很相似 ,但高次谐波谱的变化规律却很不同。
2) ADK tunneling ionization
ADK隧穿电离
3) tunneling current
隧穿电流
1.
The external condition could induce the change of piezoelectric field in superlattices and further induce the change of tunneling current.
外界条件可引起超晶格中内建电场的变化,进而引起隧穿电流的变化。
2.
Results show that with the increment of doping level, the peak tunneling current density increases for GaInP/GaAs tandem solar cells, and the performance of GaInP tunnel junctions are much better than GaAs tunnel junctions.
主要应用高掺杂的p n结理论进行隧道结的计算研究工作 ,针对GaInP/GaAs双结电池的结构 ,选择不同的宽禁带材料研究隧道结I V特性以及不同的掺杂浓度对于其I V特性的影响 ,寻找出掺杂浓度与隧穿电流的关系曲线。
3.
The gate direct tunneling current in ultra-thin oxide is computed with different device parameters.
采用自洽解方法求解一维薛定谔方程和二维泊松方程,得到电子的量子化能级和相应的浓度分布,利用MWKB方法计算电子隧穿几率,从而得到不同栅偏置下超薄栅介质MOSFET的直接隧穿电流模型。
4) tunnelling electrons
隧穿电子
5) tunneling resistance
隧穿电阻
1.
Quantum calculations of tunneling resistance in single electron transistors;
单电子晶体管隧穿电阻的量子计算
6) tunneling conductance
隧穿电导
1.
For a magnetic tunneling junction with ferromagnetic metal/magnetic potential barrier layer/ferromagnetic metal structure,tunneling conductance,spin polarization and tunneling magneto resistance rate under zero bias voltage are calculated in a quasi-free electron model.
考虑由一平面磁性势垒层隔开的两铁磁性金属电极构成的磁性隧道结,针对中间层形成的矩形势垒,在近自由电子模型的基础上,计算零偏压下的隧穿电导、自旋极化率和隧穿磁阻比率,分析势垒层特性、分子场强弱、分子场相对取向等对隧道结自旋极化电子隧穿特性的影响。
补充资料：隧穿效应
分子式：
CAS号：
性质：见隧道效应。
CAS号：
性质：见隧道效应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条