1) trapping depth
阱深
1.
It s found that when a trapping center is a little bit far from the chip surface(the distance is about one order of the half length of the Z-wire central part),the trapping depth is not approximately eqsual to the potential B_y created by a bias magnetic field,the potential energy at the trapping center should be subtracted from the potential B_y created by the bias field.
利用解析和数值方法计算了Z形磁阱的囚禁势,发现当囚禁中心和芯片表面距离较远时(该距离和Z形线中部导线的一半长度相差不超过一个量级),势阱的深度不能近似表示成偏置磁场By对应的能量,而要减去囚禁中心的势能高度;而增加By进行磁阱压缩到一定值时,势阱深度反而会下降。
2) trap depth
陷阱深度
1.
The mainly characteristic of trapping materials is the trap depth.
表征陷阱材料的主要物理量是陷阱深度,准确计算出陷阱深度对于研究陷阱材料具有重要的意义。
2.
According to the basic model that describes the microcosmic dynamics process of light-generated carriers,it is analyzed that the free photoelectron decay time changes with the trap depth and density of shallow electron traps.
依据描述卤化银微晶中光生载流子的微观动力学过程的基本模型 ,分析了自由光电子衰减时间随浅电子陷阱深度和密度的变化情况 ,从而对浅电子陷阱的阈值效应进行了讨论 ,给出了确定卤化银乳剂中浅电子陷阱最佳掺杂条件的依据。
3.
The definitions of long axis trap and trap depth are given.
定义了长轴陷阱及陷阱深度,用它们刻划了该算法迭代过程中锯齿现象的几何特征。
3) state deep trap
状态深阱
1.
The function of the system equations is not continuous in real number set because of the existence of the "state deep trap".
系统方程的函数在实数域内不连续 ,存在“状态深阱”。
2.
The canonical transformation of the quadric surface can be obtained by matrix transform and equation, it meets needs for the coefficient of switching surface and the state deep trap depends on a design of the state deep trap as a canonical transformation of quadric surface using controlled object and its initial value.
通过矩阵变换得出二次曲面的典范形式，由被控对象及其初值设计“状态深阱”为二次曲面的典范形式，得出了"状态深阱"和切换面系数所满足的方程。
3.
The "state deep trap" will bring forth due to non-definition of the system functions in a certain area when to design control law usign method of tending law in the generalized bilinear variables structure control system.
在一般双线性变结构控制系统中使用趋近律方法设计控制律时,会造成系统函数在某一区域没有定义而出现“状态深阱”。
4) deep n-well(DNW)
深n阱(DNW)
5) chasm traps
深坑陷阱
1.
This paper introduces the fan and chasm traps in ER models,analyses the causes and problems of connection traps,and presents the solution for the problems.
介绍了实体-联系模型中出现的扇形陷阱和深坑陷阱,分析了两种连接陷阱产生的原因及导致的后果并提出了问题的解决方法。
6) Trench
[英][trentʃ] [美][trɛntʃ]
深阱结构
1.
Techniques for Improving Breakdown Voltages Using Deep Trench;
采用深阱结构的耐压技术
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条