1) dispersion barriers(wells)
色散势垒(阱)
2) double-barrier and single well
双势垒单阱
3) traps in AlGaN barrier
势垒层陷阱
1.
By analyzing the shift of primary parameters,we found that the hot carriers generated by impact ionization and trapped by traps in AlGaN barrier layer,and the emission of electrons from gate electrode filling in surface states at high gate-to-drian electric fileds,were the primary reasons causing device degradation after different stress.
对不同应力前后器件饱和漏电流,跨导峰值和阈值电压的分析表明,AlGaN势垒层陷阱俘获沟道热电子以及栅极电子在栅漏间电场的作用下填充虚栅中的表面态是这些不同应力下器件退化的主要原因。
4) diffusion barrier
扩散势垒
1.
Density function theory calculation of diffusion barrier on Cu(111) surface;
Cu(111)面上原子扩散势垒的密度泛函理论研究
2.
The diffusion barriers for the single helium atom in vanadium are studied by effective medium theory, in which the structure relaxation caused by the embedded atom is considered.
采用有效介质理论,并考虑晶格驰豫的影响计算He原子在金属钒中的嵌入能,通过能量分析推测He原子在金属钒中可能的扩散路径和扩散势垒,计算结果表明,He原子在金属钒bcc结构的四面体间隙位置有能量的最低点,为4。
3.
Adsorption energy and diffusion barrier of methanol in Ni2(4,4 -bipyridine)3(NO3)4 were inves- tigated using molecular mechanics and molecular dynamics method.
采用分子力学和分子动力学相结合的方法,对甲醇在Ni2(4,4'-bipyridine)3(NO3)4中的吸附能和扩散势垒进行了研究。
5) double-barrier quantum well
双势垒量子阱
6) nonlinear barriers(wells)
非线性势垒(阱)
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条