1) charge neutral
电荷中性
1.
The existence and uniqueness of the global classical solution to the problem are proved under an electron gas in the charge neutral case.
考虑二维 Wigner-Poisson方程 Cauchy问题 ,在电荷中性情形下 ,证明了该问题整体经典解的存在惟一
2) zwitterionic molecule
荷电中性分子
1.
Three ways for separating zwitterionic molecule of amino acids are proposed.
在此基础上,提出了氨基酸核电中性分子的萃取分离途径,并实验证明通过质子转移反应分离氨基酸荷电中性分子的可能性。
3) charge neutralization
电荷中和
1.
The charge neutralization of particle surface potential by positive flocculant and the chemical destabilization and the flocculation of drilling wastewater were discussed .
将2300mg/LAl2(SO4)3与400mg/LCPAM复配使用,对钻井废水中20μm以下细小颗粒的电荷中和絮凝作用能够使其减少到1。
4) local charge neutrality condition
定域电荷中性条件
1.
In this work the variation of the band offset during the Si-GaP (110) heterojunction formation has been studied by using the self-consistent semiempirical tight-binding method combined with a local charge neutrality condition and the scattering theoretical method.
用自洽的半经验紧束缚方法、定域电荷中性条件和散射理论方法研究了Si—GaP(110)异质结形成过程中的能带偏移变化·能带偏移在第1层Si覆盖在GaP(110)衬底上后即已形成,并随Si覆盖层厚度而增加,至约5、6层后趋于最终值。
2.
The Si-GaP (110) heterojunction has been studied using the self-consistent semiempirical tight-binding method combined with a local charge neutrality condition and the scattering theoretical method.
用自洽的半经验紧束缚方法、定域电荷中性条件和散射理论方法研究了Si—GaP(110)异质结,得到的主要结果是:GaP和Si表面有相似的电子特性;由此构成的界面只显示了弱的相对于相应体的相互作用的微扰;在Si/GaP(110)界面有不同于其他异质结的、由Si-GaP界面态引起的界面势;两个半无限晶体构成的Si一GaP(110)异质结的能带偏移为0。
5) charge property
电荷性质
1.
The charge property of a new potential myocardial perfusion imaging agent 99m TcN TBI is confirmed by electrophoresis and cationic resin exchange experiments, and the charge property of 99m TcN TBI is compared with that of 99m Tc TBI.
分别应用区带电泳法和阳离子树脂交换法测定了新型潜在心肌灌注显像剂99mTcN TBI的电荷性质 ,且在相同条件下测定了99mTc TBI的电荷性质 ,并进行了比较 。
2.
The charge property of a new potential myocardial perfusion imaging agent 99 Tc mN MIBI is confirmed by electrophoresis and cationic resin exchange experiments.
采用区带电泳法和阳离子树脂交换法测定了新型潜在心肌灌注显像剂99TcmN MIBI的电荷性质 ,且在相同条件下测定了99Tcm MIBI的电荷性质 ,并将二者的电荷性质进行了比较。
6) charge characterization
荷电特性
补充资料:半导体的导电与电荷输运
半导体的导电与电荷输运
conductance and charge transport in semiconductor
“一斋<:>厂rE嚼。:丈“E4fod二于声学声子散射,r一3厂/8一1.18;而对于电离杂质散射,r二315厂/512=1 .93。在:与能量无关的情况下,r一1。如果n》P,有R一r(二皿)2一3 一 一一 、/ r /、式中E为电子能量。对P之0,有 e
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条