Monte Carlo method is used to simulate such a complete course, in which the ions pass through the neutral region, the sheath, and the shield region of a virtual cathode formed by secondary electrons near the workpiece surface, finally come to be absorbed by the surface of the workpiece with negative bias in ECR microwave plasma.

This system is applied to the measurement of microwave ECR plasma inner parameters and proved to work well.

With these advantages, Microwave ECR plasma finds number of applications in the areas of etching technologies, thin film deposition and plasma source.