1) ZnCdSe/ZnSe ADQW
ZnCdSe/ZnSe非对称双量子阱
1.
Each period of ZnCdSe/ZnSe ADQW includes one narrow ZnCdSe quantum well, one thin ZnSe barrier and one wide ZnCdSe quantum well.
用LP MOCVD技术在GaAs衬底上外延生长了ZnCdSe/ZnSe非对称双量子阱 (ADQW )结构。
2) ZnCdSe/ZnSe quantum well
ZnCdSe/ZnSe量子阱
1.
The growth of ZnCdSe/ZnSe quantum well on N-treated Si substrates which were covered with ZnO by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) was made.
在此ZnO缓冲层上利用低压金属有机化学气相淀积 (LP MOCVD)方法生长了较高质量的ZnCdSe/ZnSe量子阱。
3) ZnSe/ZnCdSe quantum wells(QWs)
ZnCdSe/ZnSe量子阱(QWs)
4) ZnCdSe/ZnSe single quantum well
ZnCdSe/ZnSe单量子阱
5) shallow ZnCdSe/ZnSe MQWs
浅ZnCdSe/ZnSe量子阱
6) asymmetric double-quantum-well
非对称双量子阱
1.
The understanding of the temperature dependence of carrier dynamics in an asymmetric double-quantum-well is essentially important for the realization of room temperature efficient photonic devices.
非对称双量子阱中载流子动力学过程的温度依赖性研究,对于实现室温下高效的量子阱光电器件有着非常重要的意义。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条