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1)  tandem semiconductor
复合结构半导体
2)  composite gate mos structure
复合栅金属氧化物半导体结构
3)  composite semiconductor
复合半导体
1.
The composite semiconductor MoO 3-TiO 2 was prepared by sol-gel method and a new type Cu/MoO 3-TiO 2 photocatalyst was prepared by an isovolumetric impregnation method.
用溶胶 凝胶法制备了复合半导体MoO3 TiO2 ,并用等体积浸渍法制备了Cu/MoO3 TiO2 光催化剂 。
2.
The photoelectrochemical properties of a Zn2+ - doped TiO2 nanoporous- film electrode sensitized by Ru(bpy)2(NCS)2 and Zn2+-TiO2/PbS composite semiconductor nanoporous films sensitized by Ru(bpy)2(NCS)2 were studied respectively.
5%);并用光电化学方法研究了 Ru(bPy)2(NCS)2(bpy—2,2’-bipydine-4,4'-dicarboxylic acid)分别敏化 Zn~2+掺杂的 TiO_2电极和 PbS/Zn~2+-TiO_2复合半导体纳米多孔膜电极的光电化学行为。
4)  coupled semiconductor
复合半导体
1.
Modification of nanocrystalline coupled semiconductor ZnO-TiO2 by means of La3+ doping using the sol-gel method was investigated.
采用溶胶-凝胶法对纳米ZnO-TiO2复合半导体进行了La3+改性,用热重-差示扫描量热、扫描电镜、X射线衍射和拉曼光谱分析了La3+/ZnO-TiO2的晶化温度和微晶结构,并以活性艳红K-2BP为模型降解物,在固定催化剂投加量和通气量条件下考察了La3+掺杂量和煅烧温度对La3+/ZnO-TiO2光催化活性的影响。
2.
The solid material of coupled semiconductor WO3-TiO2, was prepared by a sol-gel method.
用溶胶-凝胶法制得复合半导体WP3-TiO2,用浸渍法制得Cu/WO3-TiO2光催化剂。
3.
The solid material of coupled semiconductors V_2O_5-TiO_2, was prepared by sol-gel method.
用溶胶 凝胶法制得复合半导体 V2O5 TiO2,用等体积浸渍法制得Cu/V2O5 TiO2 光催化剂。
5)  coupled semiconductors
复合半导体
1.
This paper summarized some effective methods to improve photooxidation efficiency,including photosensitization,doping transition metal ions,deposition of noble metals,coupled semiconductors,and so on.
针对半导体纳米TiO2粒子带隙较宽、光利用率低的缺点,对表面光敏化、掺杂过渡金属离子、表面沉积贵金属、复合半导体等几种提高TiO2光催化活性的改性方法进行了综述,介绍了各方法的机理以及研究现状,并对TiO2光催化剂的应用前景进行了展望。
6)  compound semiconductor
复合半导体
1.
Photocatalytic degradation of wastewater from fermented molasses by compound semiconductor;
复合半导体光催化降解糖蜜废水研究
2.
TiO_2 and TiO_2 compound semiconductor powers was produced by Sol-Gel, and they were used to degrade wastewater from fermented molasses and methyl-orange.
本文采用溶胶-凝胶法制备TiO_2及其复合半导体粉末,以偶氮类的甲基橙溶液和实际的糖蜜废水为目标降解物,探讨了不同TiO_2复合半导体光催化降解有机物的效率。
补充资料:宽禁带半导体(见半导体的能带结构)


宽禁带半导体(见半导体的能带结构)
wide gap semiconductor

  习一’平叼能带结构。‘J~正J“、二二,,Conauctor见半
  
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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