1) Super micro crystal
超微晶薄膜
3) superlattice film
超晶格薄膜
1.
The thermal conductivity of superlattice films was studied using an equilibrium molecular dynamics simulation method, and the thermal conductivity of two materials composing the superlattice was calculated respectively.
采用非平衡态分子动力学方法模拟了超晶格薄膜的热传导性能,分别计算了组成超晶格薄膜的两种材料的导热系数。
2.
Pressure-dependent current-voltage characteristics of superlattice film were studied in room temperature.
采用分子束外延方法在GaAs衬底(001)上生长了AlAs/GaAs双势垒超晶格薄膜结构,测试出超晶格薄膜在室温下随着外加压力变化下,其I-V特性曲线的漂移与外加压力成一定比例关系。
3.
The polycrystalline TaN/TiN and TaWN/TiN superlattice films have been grown byreactive magnetron sputtering.
通过磁控反应溅射仪制备了ＴａＮ／ＴｉＮ和ＴａＷＮ／ＴｉＮ多晶超晶格薄膜，采用Ｘ射线衍射仪（ＸＲＤ）、透射电子显微镜和显微硬度仪对超晶格薄膜的微结构和硬度进行了分析结果表明，ＴａＮ／ＴｉＮ和ＴａＷＮ／ＴｉＮ二超晶格体系中各组成材料的晶体结构均为面心立方，呈多晶外延生长模式，从而形成共格界面，产生协调应变ＴａＮ／ＴｉＮ和ＴａＷＮ／ＴｉＮ超晶格薄膜都存在超硬效应，分别在调制周期９。
4) superlattice
[sju:pə'lætis]
超晶格薄膜
1.
Molecular dynamics simulation of thermal conductivities of Si/Ge superlattice interface;
硅锗超晶格薄膜界面热传导的分子动力学模拟
2.
LaAlO_3/BaTiO_3 superlattices prepared by laser molecular beam epitaxy(L-MBE)exhibits excel- lent electric properties with the remnant polarization of 25μc/cm~2.
通过研究发现,利用激光分子束外延技术生长的 LaAlO_3/BaTiO_3超晶格薄膜具有良好的电学性能,其剩余极化可达到25μc/cm~2。
5) microcrystalline silicon thin film
微晶硅薄膜
1.
We also discussed the growth mechanism of the microcrystalline silicon thin films from the aspect .
实验采用等离子体增强化学气相沉积(PECVD)法在玻璃衬底上制备了微晶硅薄膜。
2.
Non-uniformity of microcrystalline silicon thin film deposited by VHF-PECVD along the growth direction was studied.
本文研究了采用VHF PECVD技术制备的微晶硅薄膜的纵向均匀性。
3.
The crystallization affected by annealing studied on microcrystalline silicon thin films fabricated on tantalum;
获得了可用于太阳能电池的微晶硅薄膜的最佳晶化参数。
6) microcrystalline silicon film
微晶硅薄膜
1.
Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity;
微晶硅薄膜的表面粗糙度及其生长机制的X射线掠角反射研究
2.
Influence of silane concentration on microstructural and electrical properties of microcrystalline silicon films;
硅烷浓度对微晶硅薄膜微结构及电学性质的影响
3.
A spectroscopic ellipsometry study of the abnormal scaling behavior of high-rate-deposited microcrystalline silicon films by VHF-PECVD technique
椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为
补充资料：稀土-铁族金属非晶薄膜磁光材料
分子式：
CAS号：
性质：用稀土和铁族金属制成的薄膜磁光材料其组成、电和磁性能及单轴各向异性受沉积条件及靶材成分影响。非晶态霍耳电压(VH)与磁场关系和极向克尔磁带回线相似，在补偿温度(Tcomp)附近，霍尔系数R1改变符号，当T<Tcomp时，R1为负，相反为正。其制备方法为高频溅射、真空蒸发、磁控溅射等。
CAS号：
性质：用稀土和铁族金属制成的薄膜磁光材料其组成、电和磁性能及单轴各向异性受沉积条件及靶材成分影响。非晶态霍耳电压(VH)与磁场关系和极向克尔磁带回线相似，在补偿温度(Tcomp)附近，霍尔系数R1改变符号，当T<Tcomp时，R1为负，相反为正。其制备方法为高频溅射、真空蒸发、磁控溅射等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条