Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology.

Hydrogen-free diamond-like films and silicon incorporated diamond-like carbon films were deposited by direct current magnetron sputtering with Ar gas, graphite and silicon chips on the single-crystal silicon and optical glass substrates.

Influence of texture on residual strain in CVD free standing diamond films;

Molecular dynamics simulation of thermal conductivity of thin diamond films;

Effect of various surface treatments on diamond films deposited on WC-6%Co;

Effect of methane concentration on the growth of (100) texture diamond thin films;

Electroluminescence of diamond thin films;

The field emission mechanism of diamond thin films was introduced.

Effect of ambient pressure on diamond films on boronized WC-13%Co substrates;

Structural characterization and properties of co-doping n-type CVD diamond films;

Effects of a copper implant layer on the adhesion of diamond films on WC-Co substrates;

Research progress of test methods for evaluating the adhesion of diamond thin films coated on cutting tools in low pressure vapor phase;

In situ reflectivity measurement of CVD diamond thin film;

Development of diamond thin films electroluminescence;