1) E-submodule idea
E-子模理想
2) E-ideal semigroup
E理想方群
3) perfect gas molecules model
理想气体分子模型
4) Ideality factor
理想因子
1.
Research on the ideality factor of GaN light-emitting diodes on Si substrate;
Si衬底GaN基LED理想因子的研究
2.
The ideality factor and the barrier height of Schottky contact on AlGaN/GaN heterostructure are calculated by I-V measurement in a wide temperature range.
通过对AlGaN/GaN HEMT器件肖特基栅电流输运机理的研究,在变温下采用I-V法对AlGaN/GaN上的Ni/Au肖特基势垒高度和理想因子进行了计算。
3.
An ideality factor of n=3 and a series resistance of RS=93Ω are obtained from the forward current-voltage curve of the device.
从器件的正向I-V特性曲线计算了理想因子n与串联电阻RS分别为3和93Ω。
5) ideal rotor
理想转子
1.
Rub-impact movement of a ideal rotor is under consideration based on the Poicare map in the paper.
应用poincare映射方法对理想转子碰摩运动的单碰运动进行分析,通过严格的理论推导,得出了理想转子单点刚性碰摩的存在条件,并指出当激振力的频率(ω)与系统的固有频率(ω0)比值(ω)为无理数时,周期性的单碰运动是不存在的;导出了判断理想转子周期性碰摩运动稳定性的特征方程。
6) ideal factor
理想因子
1.
Before gate metallization,experiment were made through different surface treatment methods and results show that the Schottky characteristics can be improved,but reverse leakage current and ideal factor can not be obtained fundamentally.
在栅金属化前,采用不同的表面处理方法进行实验,发现通过表面处理,栅肖特基特性得到一定的改善,但还不能从根本上解决漏电大、理想因子偏高的问题。
2.
It is found that in the backward voltage segment of the I-V curve the leakage current is larger because of deep-level-assistant tunneling;under little forward voltage metal gathers along with the dislocations thus leads to leakage current;in the generation-recombination and diffusion current segments the restriction from MQWs leads to larger ideal factor;low imp.
结果表明,相对理想情形,特性曲线的反向偏压区漏电因深能级隧穿偏大;正向小偏压下因沿着位错汇聚金属产生漏电流;产生-复合电流区和扩散电流区因多量子阱限制而理想因子偏大;由于有源区低掺杂,在10 A/cm2就开始形成大注入区;在大电流下也因为串联电阻分压而形成串联电阻区。
3.
After annealing the barrier height and the ideal factor of the diode increased from 0.
计算了退火前后该器件的理想因子、势垒高度。
补充资料：模理想
模理想
modular ideal
模理想汇n扣山山ri山汾l;MO用阴”p”从益“服幼J 环R的有下述性质的右(左)理想(泪暇d)J:R至少有一个元素e，使对R中所有的x，差x一ex属于J(对应地，尤一戈ecJ).元素e称为模理想J的左(右)恒等元(1eft州ght) identity). 在有恒等元的环中，每个理想都是模的.每个真模右(左)理想可嵌人极大右(左)理想中，后者自然是模的.结合环的全部极大模右理想的交与全部极大左模理想交重合，就是环的Ja即胜翔l根(Jac。玩onn戈dical).模理想也称为正则理想(reg川arid已互七).
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条