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1)  arc discharge deposition
电弧离子镀膜
1.
The construction of the target holder was changed so as to keep no other materials included in target surface, thus improving the purity of the films prepared by arc discharge deposition.
通过对靶座结构的改变,使得靶面不再存在其他材质,由此提高了电弧离子镀膜膜层的纯度。
2)  pulsed vacuum arc deposition
脉冲真空电弧离子镀膜
1.
It s very important to control the thickness of the film in the process of the pulsed vacuum arc deposition (PVAD).
 在脉冲真空电弧离子镀膜过程中,膜层厚度的控制至关重要。
3)  arc ion plating
电弧离子镀
1.
Properties of TiAlCrN coating prepared by arc ion plating;
电弧离子镀TiAlCrN多元涂层的性能研究
2.
Effect of Ce on microstructure and properties of Ti-coatings deposited by arc ion plating;
电弧离子镀(Ti,Ce)N涂层组织与性能研究
3.
Microstructure and oxidation resistance of NiCrAlY coating deposited on Co-based high-temperature alloy by arc ion plating technology;
钴基合金电弧离子镀NiCrAlY涂层的组织结构和抗氧化性能
4)  Cathode arc
电弧离子镀
1.
The single-layer and multi-layer CrN coating have been deposited by cathode arc technigue in this paper.
电弧离子镀是一种优良的薄膜沉积技术,有着其它镀膜形式不可比拟的优点:如高的离化率,高的沉积速率和良好的膜基结合强度等,利用这种技术制备的氮化物薄膜,如TiN、CrN等,已经在工业生产中得到了广泛应用。
2.
The hard film Cr+Ti+TiNC/TiNC+C/DLC has been prepared by combining unbalanced magnetron sputtering with cathode arc and Hall ion source.
将中频孪生靶非平衡磁控溅射、电弧离子镀和霍尔离子源辅助沉积三种工艺结合起来制备了Cr+Ti+TiNC/TiNC+C/DLC硬质膜。
3.
The hard black films has been prepared by combining unbalanced magnetron sputtering with middle frequency twin targets magnetron sputtering, cathode arc and Hall ion source.
将中频孪生靶磁控溅射、非平衡磁控溅射、电弧离子镀和霍尔离子源辅助沉积四种技术结合起来开发了复合镀膜工艺,制备了黑色硬质膜。
5)  arc ion plating (AIP)
电弧离子镀
1.
Al-O-N and Cr-O-N thin films were deposited on superalloy DSM11 by arc ion plating (AIP).
采用电弧离子镀方法在高温合金DSMll基材上沉积Al-O-N和Cr-O-N薄膜,研究了不同O_2,N_2流量对薄膜相结构的影响以及高温下DSMll/NiCoCrAlY,DSMll/Al-O-N/NiCoCrAlY和DSMll/Cr-O-N/NiCoCrAlY体系的元素互扩散行为。
2.
Ni-Co-Cr-Al-Y-Si-B coatings were deposited on Ni base superalloys DZ125 and DSM11 by arc ion plating (AIP).
采用电弧离子镀技术在DZ125和DSM11两种镍基高温合金基材上沉积Ni-Co-Cr-Al-Y-Si-B涂层,研究了高温合金基材及其Ni-Co-Cr-Al-Y-Si-B涂层在900℃的75%Na2SO4+25%K2SO4熔盐中的热腐蚀行为。
3.
Cr-O-N films with different chemical composition were deposited using arc ion plating (AIP) between NiCoCrAlY coatings and the DSM11 substrate as diffusion barriers.
采用电弧离子镀技术在NiCoCrAlY涂层与高温合金基材DSMll间沉积不同成分的Cr-O-N薄膜作为扩散阻挡 层,研究了900℃下氧化1400 h后DSMll/Cr-O-N/NiCoCrAlY体系中Cr-O-N层阻挡合金元素互扩散的行为以及阻 挡层对涂层氧化动力学曲线的影响。
6)  Multi-Arc Ion Plating
多弧离子镀膜机
1.
Application of PLC on the Multi-Arc Ion Plating System;
PLC在多弧离子镀膜机系统中的应用研究
补充资料:电解食盐水溶液离子膜电解槽所用的膜材料之一
分子式:
CAS号:

性质:又称全氟羧酸-磺酸复合离子膜  Rf-COOH-Rf-SO3H  电解食盐水溶液离子膜电解槽所用的膜材料之一。使用时,将较薄的羧酸层面向阴极,较厚的磺酸层面向阳极,因而兼有羧酸膜和磺酸膜的优点。由于Rf-COOH层的存在,可阻挡氢氧离子返迁移到阳极室,确保了高的电流效率(96%),因Rf-SO3层的电阻低,能在高电流密度下运行,且阴极液可用盐酸中和,产品氯气中氧含量低,氢氧化钠浓度可达33%~35%。可在全氟磺酸膜上涂敷一层全氟羧酸的聚合物,或是将磺酸膜和羧酸膜进行层压,或是采用化学方法处理而制得的复合膜。现以采用化学方法处理者质量最佳。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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