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1)  Ni/CS/Al2O3 catalyst
Ni/CS/Al2O3催化剂
1.
The supported NiB/CS/Evg and Ni/CS/Al2O3 catalysts were prepared by metal inducing electroless plating method and their catalytic activities were measured through hydrogenation of dimethyl aminoureazinic acid.
采用金属诱导化学镀法制备了负载型NiB/CS/EVg、Ni/CS/Al2O3催化剂,将其用于二甲基紫脲酸加氢反应。
2)  Ni/Al2O3 catalyst
Ni/Al2O3催化剂
1.
Temperature profiles of fixed-bed with Ni/Al2O3 catalyst were studied during the tri-reforming of methane in the temperature range of 750 ℃~950 ℃,1 atm,and space velocity from 2 000 h-1 to 20 000 h-1.
在连续流动的固定床反应装置上,考察了Ni/Al2O3催化剂上CH4三重整反应中催化剂床层的温度分布。
2.
Catalytic performance of extruded high Ni content Ni/Al2O3 catalyst prepared by impregnating technique and the conventional pellet catalyst for gas phase toluene hydrogenation has been studied.
研究浸渍法制备的条形负载型高Ni含量的Ni/Al2O3催化剂及其与压片法制备催化剂在甲苯气相加氢中的催化活性的对比,并研究了氢压、反应温度、氢油比和空速对甲苯转化率的影响。
3.
The effects of temperature and time on the nature of carbon deposition over Ni/Al2O3 catalyst were investigated using an on-line quadruple mass spectrometer method.
用在线质谱法研究了Ni/Al2O3催化剂上甲烷分解温度和时间对积炭的影响。
3)  Ni/Al 2O 3 catalyst
Ni/Al2O3催化剂
4)  Ni/MgO-Al2O3 catalyst
Ni/MgO-Al2O3催化剂
1.
The effects of CeO2 and/or CaO as promoters on the physico-chemical properties and the catalytic performance over Ni/MgO-Al2O3 catalyst for partial oxidation of methane to syngas were studied by means of BET,XRD,H2-TPR,TEM and reaction activity evaluation.
采用BET、H2-TPR、XRD、TEM和活性评价等表征手段,考察了CeO2、CaO助剂对Ni/MgO-Al2O3催化剂物化性质和甲烷部分氧化制合成气反应性能的影响。
5)  Ni/SiO_2/Al_2O_3 catalyst
Ni/SiO2/Al2O3催化剂
1.
1,3-propanediol was prepared by hydrogenation of 3hydroxypropanal aqueous solution over Ni/SiO_2/Al_2O_3 catalyst under high pressure.
以丙烯醛水合产物3-羟基丙醛(HPA)水溶液为原料,在Ni/SiO2/Al2O3催化剂作用下与高压氢气反应生成1,3-丙二醇(1,3-PDO)。
6)  Pd-Ni/Al_2O_3 catalysts
Pd-Ni/Al2O3催化剂
补充资料:Ni-Al microwave ferrite
分子式:Ni-Al
CAS号:

性质:又称镍-铝微波铁氧体。在镍旋磁铁氧体基础上,用三价铝离子置换一部分三价铁离子形成的镍-铝旋磁铁氧体。化学式为NiAlxFe2-xO4。当Alx的x值达约0.7%,磁性出现反常现象,这时材料已无实用值。按铝含量而分为0.1≤x≤0.4和0.7≤x≤1.0两类旋磁铁氧体。饱和磁化强度0.035~0.145T,随铝量换量的增加而降低。居里温度155~440℃。铁磁共振线宽18.0~44.0kA/m(9kHz)。介电常数8.2~9.5。介质损耗角正切值(3~50)×10-4。采用电子陶瓷工艺,热压烧结或氮气氛烧结。适于制作高功率器件。

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