1) particle sputtering rate
粒子溅射速率
2) sputtered particles
溅射粒子
3) sputtering rate
溅射速率
1.
There are many factors influencing the thin-film NiCr resistor s TCR(temperature coefficient of resistance),such as the vacuum degree during sputtering,sputtering rate,substrate temperature,film thickness and temperature and its holding time in heat-treatment.
影响NiCr薄膜电阻TCR的因素很多,我们分别从溅射淀积工艺和热处理工艺来研究和探讨NiCr薄膜电阻TCR与溅射时的真空度、溅射速率、基片温度、薄膜厚度及热处理温度和时间等因素的关系,从而为提高NiCr薄膜电阻的稳定性和降低其TCR值提供有益的条件。
2.
The total transport model was established and the sputtering rate and compound fraction (θ\-t)of the target were obtained through the analysis of the particle generation, transport and surface reaction The models are expressed by the macro technology parameters and the construction parameters of the chamber,which is of important applied value to sputtering deposited technique of film material
从粒子的产生、输运及表面反应出发 ,建立总的输运模型并得到靶的溅射速率和化合物的复盖度。
4) EBIS
二次粒子溅射
5) particle splatting
粒子泼溅
1.
An approach based on smoothed particle hydrodynamics to simulate fluids with free surfaces was proposed, while surface tension was modeled by using Van der Waals equation of state with a combination of short-range repulsive and longer-range attractive interactions between fluid particles, finally a GPU-based particle splatting algorithm was designed for rendering.
提出基于平滑粒子流体力学的自由界面流体模拟方法,采用了范德瓦尔斯方程与粒子间短距离排斥力和长距离吸引力作用的表面张力,设计出基于GPU的粒子泼溅算法。
6) high rate sputtering
高速溅率
补充资料：初级粒子和原级粒子
分子式：
CAS号：
性质：又称初级粒子和原级粒子。利用各种化学反应方法得到的最初粒子(晶粒)。一次粒子的大小约为0.005～1μm，比筛分的极限小得多，在介质中有相当高的稳定性。
CAS号：
性质：又称初级粒子和原级粒子。利用各种化学反应方法得到的最初粒子(晶粒)。一次粒子的大小约为0.005～1μm，比筛分的极限小得多，在介质中有相当高的稳定性。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条