1) thermally assisted tunneling
热助隧穿
2) Field aided tunnel
场助隧穿
3) hot electron tunneling
热电子隧穿
1.
It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
发现表面高密度缺陷减薄了势垒层厚度,显著增强了热电子隧穿过程。
2.
Two electron transition processes between channel and surface states in GaN HFET:hot electron tunneling and surface to band edge transition are investigated.
研究了GaNHFET中沟道热电子隧穿到表面态及表面态电子跃迁到表面导带两种跃迁过程及其激活能。
4) photon-assisted tunneling
光子辅助隧穿
5) Fowler-Nordheim tunneling
电场协助隧穿
1.
The result indicated that carrier crossed silicon oxide films by the Fowler-Nordheim tunneling model at a high bias voltage.
结果表明,在较高的正向电场下,载流子主要是以电场协助隧穿(Fowler-Nordheim隧穿)方式通过氧化层,而在低场范围内和反向电场下,电流的产生则以热电子发射的方式为主。
6) phonon assisted tunneling
声子辅助隧穿
1.
The phonon emission rate and the phonon assisted tunneling (PAT) current in an asymmetric double barrier structure are theoretically studied.
理论研究了非对称双势垒结构中光学声子发射率和光学声子辅助隧穿电流 。
补充资料：隧穿效应
分子式：
CAS号：
性质：见隧道效应。
CAS号：
性质：见隧道效应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条