1) double-barrier and single well
双势垒单阱
2) double-barrier quantum well
双势垒量子阱
3) dispersion barriers(wells)
色散势垒(阱)
4) traps in AlGaN barrier
势垒层陷阱
1.
By analyzing the shift of primary parameters,we found that the hot carriers generated by impact ionization and trapped by traps in AlGaN barrier layer,and the emission of electrons from gate electrode filling in surface states at high gate-to-drian electric fileds,were the primary reasons causing device degradation after different stress.
对不同应力前后器件饱和漏电流,跨导峰值和阈值电压的分析表明,AlGaN势垒层陷阱俘获沟道热电子以及栅极电子在栅漏间电场的作用下填充虚栅中的表面态是这些不同应力下器件退化的主要原因。
5) double-barrier
双势垒
1.
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
电子双势垒量子隧穿的散射矩阵方法及其数值模拟
2.
The two kinds of double-barrier light emission tunnel junctions Cu-Al2O3-MgF2-Au and Si-SiO2-Al-Al2O3-Au have been fabricated successfully.
成功地制备了Cu-Al2O3-MgF2-Au及Si-SiO2-Al-Al2O3-Au两种结构双势垒隧道发光结。
6) double-barrier potential
双势垒
1.
The tunneling characteristics of the semicondoctor quantum well through a double-barrier potential model is studied.
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条