1) dielectric film phase shifter
介质薄膜移相器
2) dielectric phase shifter
介质移相器
1.
Barium strontium titanate (BaxSr1-xTiO3, BST) thin films are potential materials for the applications of microwave devices such as dielectric phase shifters and tunable filters due to their high dielectric nonlinearity, low leakage current and adjusting Curie temperature.
钛酸锶钡(BaxSr1-xTiO3,简称BST)薄膜具有非线性强、漏电流小、居里温度可调等特点,因而在介质移相器、压控滤波器等方面有着广泛的应用前景。
2.
Barium strontium titanate (BaxSr1-xTiO3, short for BST) thin films are potential materials for the applications of microwave devices such as dielectric phase shifters and tunable filters due to their high dielectric nonlinearity, low leakage current and adjusting Curie temperature.
钛酸锶钡(Ba_xSr_(1-x)TiO_3,简称BST)薄膜具有非线性强、漏电流小、居里温度可调等特点,因而在介质移相器、压控滤波器等方面有着广泛的应用前景。
3.
In this dissertation, a new CPW-type ferro-electric thin film dielectric phase shifter with parallel capacitor was investigated, which has significantly potential application in T/R module of millimeter-wave powered phased array radar.
本文主要研究了在毫米波有源相控阵雷达的T/R 组件中有重要应用前景的铁电薄膜介质移相器。
3) medium thin filter
介质薄膜滤波器
4) Dielectric film
介质薄膜
1.
In this paper, a theoretical model of long-pulse laser leading to thermal stress damageof dielectric film in film/substrate systems is developed.
本文用有限元法研究并建立了长脉冲激光对介质薄膜热应力损伤的理论模型，在该模型的基础上模拟了介质薄膜和基底中的温度场和热应力场瞬态分布，分析了长脉冲激光对介质薄膜的热应力损伤的机理。
2.
The damage mechanisms and characteristics of dielectric films under the irradiation of the long pulse laser are studied in this paper.
本文从理论和实验方面研究了长脉冲激光对介质薄膜的损伤机理和特性,并对波长为1064nm的长脉冲激光产生的损伤阈值进行了测试研究。
6) medium film
介质薄膜
1.
A layer of medium film is plated on the surface of such devices (called film of increasing transmission or FIT) in order to reduce the loss of surface reflection.
在光学器件中,由于器件(如透镜、棱镜)表面的反射作用而使光能损失,为了减少光学器件表面的反射损失,常在器件表面镀上一层透明介质薄膜(称为增透膜),增透膜的效果与介质薄膜的折射率、厚度等相联系。
补充资料：移相器
一种用以调节交流电压相位的装置。移相器一般是多相的，其结构如图所示。它和一台被堵转的绕线式三相异步电动机相似。通常定子绕组作为原绕组，转子绕组为副绕组。在移相器的转子转轴上装有一套蜗轮蜗杆。转动蜗轮蜗杆，能使移相器的转子相对于定子在一定范围内转动。当定子上的原绕组接三相交流电源后，气隙里产生的旋转磁场将在原、副绕组中分别感应出电动势E1和E2。其大小与各绕组的有效匝数成正比，而相位决定于原、副绕组轴线之间的相对位置。例如原、副绕组轴线在空间位置上彼此相差α电角度,忽略它们的漏阻抗电压降，可以得到原、副边电压的关系为U1≈－E1式中nsr是原、副边绕组的变比。改变转子的位置,可以改变副边电压相对于原边电压的相位，但输出电压的大小不变。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条