1) source-drain resistance
漏源电阻
2) S/D resistance
源漏电阻
3) source-drain contact resistance
源漏接触电阻
4) parasitic source-drain resistances
寄生源漏电阻
5) S/D series resistance
源漏串联电阻
1.
Because of the great potential of SiC MOSFETs and circuits, in this paper, the characteristics of 6H-SiC PMOSFETs are studied systematically, emphasizing on the effects of interface state and S/D series resistance on SiC PMOSFETsFirstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented.
研究了SiC的晶体结构，分析了SiC中杂质的不完全离化现象以及SiC中空穴迁移率的拟和公式；用解一维poisson方程的方法分析了SiC PMOS空间电荷区的电特性； 本论文重点分析了界面态分布和源漏串联电阻对SiC PMOS器件特性的影响。
6) creeping electrical resistance
漏电电阻
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条