1) modified quantization
修正量化表
3) coarse quantum correction
粗量化修正
4) optimized modification amount
优化修正量
1.
In order to acquire point cloud data which can truly reflect the design view,a fairing algorithm with optimized modification amount of cloud data is researched.
为了获取能真实客观反映原始设计意图的点云数据,本文研究了优化修正量光顺算法。
5) chemical surface modification
化学表面修正
1.
For HMDS (hexamethyedisilane) and DCDMS (dichlorodimeth siliane) chemical surface modification, the stability of silicon nitride (Si 3N 4) single layer and silicon nitride/silicon dioxide(Si 3N 4/SiO 2) double layer electrets charged with constant voltage corona were compared by compensation method.
采用补偿法对六甲基二硅胺烷 (hexamethyedisilane ,HMDS)和二氯二甲基硅烷 (dichlorodimethsiliane ,DCDMS)化学表面修正恒压电晕充电硅基氮化硅 (Si3N4)薄膜驻极体及氮化硅 /二氧化硅 (Si3N4/SiO2 )薄膜驻极体的电荷储存稳定性进行了比较性的研究 。
2.
The influence of heat treatment and chemical surface modification, the key preparing processes, on the electred properties of these films are studied through measuring the surface potential decay and the thermally stimulated discharge current as well as analyzing the transmission infrared spectra and the scanning electron microscopy photos.
用红外透射谱、扫描电子显微镜以及驻极体等温表面电位测量和热刺激放电等实验考察了热处理和化学表面修正两个关键工艺对溶胶－凝胶二氧化硅样品驻极体性能的影响。
3.
In this paper,in order to improve the surface electret state for enhancing humidity proof,the basic principle of chemical surface modification to silicon nitride film and silicon nitride/silicon dioxide double layer film based on silicon substrate was discussed.
描述了为改善其表面驻极态的抗湿能力 ,对 Si基 Si3N4 和 Si3N4 /Si O2 薄膜驻极体所进行的化学表面修正的基本原理。
6) quantified elements-revising
因素修正量化
1.
This paper established the quantified elements-revising table,introduced GRA to make the appraisal value more realistic.
在此,建立因素修正量化表,并引入灰关联分析,使得估价结果更加符合实际。
补充资料：阿斯曼通风干湿表(见通风干湿表)
阿斯曼通风干湿表(见通风干湿表)
AS iman tongfeng ganshibiao阿斯曼通风干湿表见通风干湿表。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条