1) indium-tin hydroxide
铟锡氢氧化物
1.
The experimental results show that amorphous indium-tin hydroxide composite powder was first transformed into amorphous 1TO composite powder, then into crystal ITO composite powder, and the temperature of crystallization is about 390℃.
采用热分析、XRD等方法,研究了用化学共沉淀法制备的铟锡氢氧化物复合粉末在煅烧过程中的变化规律。
2) Indium-Tin oxide
铟锡氧化物
1.
Indium-Tin oxide transparent conductive films were prepared by DC sputtering method using hot-isostatic pressed ITO target,and the effects of oxygen partial pressure on the microstructures and properties of Indium-Tin oxide films were studied.
通过直流磁控溅射热等静压铟锡氧化物(ITO)靶材制备ITO导电薄膜,并且针对O2-Ar混合气氛中氧的分压对ITO膜的结构、表面形貌、透光率以及导电率的影响进行了研究。
2.
, preparation of spherical or acicular indium-tin oxide (ITO) powders and preparation of ITO targets by hot isostatic pressing (HIP) were comprehensively investigated, and cylindrical ITO targets having a relative density of higher than 99% were obtained.
本论文以热等静压制备铟锡氧化物(ITO)靶材的工艺流程为主线,借助热分析(TGA-DTA)、X 射线衍射(XRD)、透射电镜(TEM)、扫描电镜(SEM)、能量分散谱(EDS)等分析手段,系统地研究了球形和针状ITO 粉末的制备以及热等静压制备ITO 靶材的相关工艺,成功地制备了外形规整的、密度大于99%的圆柱形ITO 靶材。
3) Indium tin oxide
铟锡氧化物
1.
Preparation of ultra-fine indium tin oxide powders with high specific surface areas by co-precipitation method;
共沉淀法制备高比表面积的铟锡氧化物超细粉末
2.
Effect of heat treatment temperature on microstructure of nano-powders of indium tin oxide;
热处理温度对铟锡氧化物纳米粉显微结构的影响
3.
A simple hydrothermal process has been developed to synthesize indium tin oxide nanoparticles by employing In_2O_3 and Sn nanoparticles prepared by thermal plasma method as reactant and NaOH solution as the solvent.
采用三氧化二铟和真空蒸发法制得的纳米锡粉为原料,溶解在一定浓度的氢氧化钠溶液中,水热条件下成功的合成了纳米级的铟锡氧化物粒子,通过粉末 X 射线衍射(XRD),场发射扫描电子显微镜(FE-SEM), 透射电子显微镜(TEM)和紫外可见光光吸收光谱 (UV-Vis)等手段对所得产物进行表征。
5) ITO
[英]['i:,təʊ] [美]['i,to]
铟锡氧化物
1.
Investigation on Densification of ITO Ceramic Target by Using HIP Technique;
铟锡氧化物陶瓷靶材热等静压致密化研究
补充资料：氢氧化铟
分子式：In(OH)3
CAS号：
性质：又称三水合氧化铟（diindium trioxide trihydrate）In2O3·3H2O。重而白色胶质沉淀。不溶于水和氨水。易溶于氢氧化钾和氢氧化钠，溶于酸。加热徐徐失水，至600℃完全脱水生成三氧化二铟。可由金属铟与盐酸作用生成三氯化铟后用氨水处理后制得。可用于制取铟的氧化物，作为半导体材料。
CAS号：
性质：又称三水合氧化铟（diindium trioxide trihydrate）In2O3·3H2O。重而白色胶质沉淀。不溶于水和氨水。易溶于氢氧化钾和氢氧化钠，溶于酸。加热徐徐失水，至600℃完全脱水生成三氧化二铟。可由金属铟与盐酸作用生成三氯化铟后用氨水处理后制得。可用于制取铟的氧化物，作为半导体材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条