1) common-base current gain
共基极电流增益
2) common-emitter current gain
共射极电流增益
3) common base gain
共基极增益
5) collector-to-emitter current gain
集电极-发射极电流增益
6) current gain
电流增益
1.
SiGe/Si HBT with a current gain of 26000 in the temperature of 77K;
77K下电流增益为2.6万的SiGe/Si HBT
2.
Analysis of Current Gain in Al_(0.3) Ga_(0.22) In_(0.48) P/GaAs HBT at High Temperature\+*;
高温Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT电流增益的计算分析
3.
In Dartington transistor,the current gain and the distribution of the collectorcurrents of transistors in each stage are changed due to the introduction of stable resist-ance.
在达林顿晶体管中,由于稳定电阻的引入,使电流增益和各级管间集电极电流分配关系发生了变化。
补充资料：标准冲击电流波形(见冲击电流发生器)
标准冲击电流波形(见冲击电流发生器)
standard impulse current wave form
blaozhun ehonglld}0n4一u box]ng标准冲击电流波形(standard impulse currentwave form)见冲击电流发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条