1) depletion depth
耗尽深度
2) depletion layer depth
耗尽层深度
3) depletion-layer thickness
耗尽层宽度
4) deep depletion transistor
深耗尽层晶体管
5) burnup
燃耗深度
1.
MCCOOR code was used to simulate the nuclide compositions for pressurized water reactor(PWR) fuel and boiling water reactor(BWR) fuel in the pin-cell model at different burnups for two different initial fuel enrichments and full power history,respectively.
应用燃耗分析程序MCCOOR计算压水堆和沸水堆的栅元模型满功率运行时2种不同初始燃料富集度情形下不同燃耗深度的燃料核素成分,分析轻水堆燃料的关联核素比值与燃耗深度的关系,获得了轻水堆燃料的关联核素特征比值,并探索了由乏燃料相应核素特征比值确定其堆型的可行性。
2.
Experiences in-core indicate that the swelling of metallic fuels is so severe that the cladding begins to fail at a low burnup,moreover the solidus temperature of uranium or uranium-plutonium fuel and eutectic temperature with stainless steel cladding materials are low and made it impractical to use metallic fuels in a commercial reactor.
国外早期快堆发展的燃料集中在金属燃料上,但金属燃料辐照肿胀严重,只能实现较低的燃耗深度,且较低的固相线温度和与包壳间的共晶温度又制约了金属燃料的实际应用。
6) water consumption depth
耗水深度
1.
The tests conducted in the plot made of cement proved that water consumption depths by winter wheat was 80～100cm in the seedling stage, 140～160cm in the eloga- tion stage and 180～200 cm in the filling stage.
灌水入渗深度与作物的耗水深度相吻合的灌水量为最佳灌水量。
补充资料：耗尽区（depletionregion）
耗尽区（depletionregion）
在半导体pn结、肖特基结、异质结中，由于界面两侧半导体原有化学势的差异导致界面附近能带弯曲，从而形成能带弯曲区域电子或空穴浓度的下降，这一界面区域在半导体物理中称为耗尽区。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条