1) base spreading resistance
基区扩展电阻
2) base spreading resistance
基极扩展电阻
3) spreading resistance
扩展电阻
1.
In this paper, the regularity of the changed dosage and the depth of strain, the injury layer, the spreading resistance when N~(+)and N~+_2 were pouring into Si, were investigated.
本文应用X射线衍射方法、红外光谱分析方法、扩展电阻测量方法研究了N+和N+2注入硅的应变、损伤度、扩展电阻率随注入剂量、注入深度变化的规律,形成Si3N4非晶层的条件。
2.
the sensing principle of the silicon spreading resistance temperature sensor (SRT) has been investigated.
阐述了一种结构特别的硅扩展电阻式元件的温度敏感原理，提出了物理模型，探讨了其工作温区拓宽机理。
3.
A novel integrated spreading resistance silicon flow (SRSF) sensor is presented.
提出了一种新型集成扩展电阻硅流量（ＳＲＳＦ）传感器。
4) base stretching
基区扩展
5) base resistance
基区电阻
1.
Testing base resistance r_(bb) of transistor;
晶体管基区电阻r_(bb)的测试
2.
Including a base resistance model dependent of temperature,optimuni design of the base of hish-spoed bipolar transistors at low temperatures is investigated.
本文考虑禁带变窄效应和载流子冻析效应，分析了基区掺杂浓度的分布、基区峰值浓度的大小及位置对基区渡越时间的影响，结合基区电阻的温度模型，对低温高速双极晶体管的优化设计作了探讨。
6) Spreading resistance technique
扩展电阻技术
1.
Application Study of Spreading Resistance Technique on Silicon and Silica base Material;
扩展电阻技术在硅、硅基材料测试中的应用
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条