1) backing side trap
前级侧阱
2) forevacuum trap
前级真空冷阱
3) exhaust side trap
排出侧阱
4) lateral gin-trap
侧阱铗
5) trap level
陷阱能级
1.
The results indicate that Eu2+ ions act luminescent centers and Dy3+ ions as trap levels.
研究结果表明,掺杂的Eu在基质材料中主要充当发光中心,而Dy离子主要充当陷阱能级。
6) Trap energy
陷阱能级
1.
By analysis of dark current mechanism and experiments,it is found that the n-InSb reverse layer induced by trap energy of anode polarization layer connects with p-InSb layer,which plays a role of shunt resistance,and leads to the electric performance of detectors badly.
通过对其漏电流分析和制作MIS器件进行试验,发现阳极化层中的陷阱能级感应n型InSb表面产生反型,p/n结表面附近的反型层与p型层连接后起到分流电阻作用,导致器件电性能变差。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条