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1)  metallized film
上金薄膜
2)  metallized polyester film
上金聚酯薄膜
3)  silicon on diam ond
金刚石膜上的薄层硅
1.
Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology.
以金刚石膜作为绝缘埋层, 利用金刚石膜上的薄层硅( S O D)技术, 制作 54 H C T03 C M O S/ S O D 结构的集成电路。
4)  Metal-film-on-insulator
绝缘层上金属薄膜
5)  metallic film
金属薄膜
1.
The adhesion property of Au/NiCr/Ta multi-layered metallic films was investigated by the indentation method,rolling contact fatigue method and scratch method with both friction and acoustic emission modes.
针对Al2O3基体上磁控溅射沉积的Au/NiCr/Ta多层金属薄膜,用压痕法、滚动接触疲劳法、摩擦力和声发射两种模式同时监测的划痕法,对比研究了金属薄膜与基体的结合性能。
2.
Au/NiCr/Ta and Au/NiCr metallic multilayers were deposited on A1203 substrate by magnetron sputtering and their critical load (La) was studied by scratch method with friction and acoustic emission mode, moreover, the scratch curve and morphology of metallic films were compared with TiN film.
采用摩擦力和声发射两种模式同时监测的划痕法研究了 Au/NiCr/Ta和 An/NiCr多层金属薄膜的临界载荷 Lc,并与TiN硬质薄膜进行了对比。
3.
The relationship between resistivity of metallic film and its surface roughness, residual stress was investigated according to experimental results.
针对磁控溅射Au金属薄膜,从实验角度研究了该薄膜电阻率与表面粗糙度、残余应力的关系,并对结果进行了分析。
6)  alloy film
合金薄膜
1.
Effect of polished surface on the structure of alloy film with copper substrate;
合金薄膜铜衬底抛光质量对薄膜表面结构的影响
2.
In the process of manufacturing Ni-Cr alloy filmresistances of IC by using magnetronic sputtering,the film resistive property has been found having a regular change after annealing process.
这一现象的发现对我们今后在集成电路镍铬合金薄膜电阻的设计优化方面具有较高的参考意义。
3.
In this paper, the Ti_ 50Ni_ 36Cu_ 14 alloy films were prepared by Pulse Laser Deposition (PLD) technology.
采用脉冲激光沉积 (PLD)技术制备了Ti50 Ni36 Cu1 4合金薄膜。
补充资料:金菊对芙蓉 九月二十五日寿金 金氏园有
【诗文】:
寿宿腾光,寿香袅碧,郁葱枝上梧桐。记*麟令旦,门挂弧蓬。今年东阁郎皆侍,怀章绶、拜捧金钟。荣华富贵,眼前谁似,堪展眉峰。秋高景物俱浓。正阶前金菊,巧对芙蓉。爱菊名寿客,寿与公同。醉蓉初莹凝脂面,酣天酒、芳脸潮红。何妨判饮,与花双醉,醉似花容。


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