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1)  quasi-ferroelectric ceramic
准铁电陶瓷
2)  Ferroelectric ceramics
铁电陶瓷
1.
Recent progress on observations of domain and domain switchings in ferroelectric ceramics;
铁电陶瓷的电畴及畴变观测研究进展
2.
Preparation of PZN-PT-BT ferroelectric ceramics by modified two-step method;
改进的两步法制备PZN-PT-BT铁电陶瓷
3.
Preparation and Characterization of Ferroelectric Ceramics and Thin Films of Barium Titanate via Sol Gel Technique;
钛酸钡铁电陶瓷和薄膜的溶胶凝胶法制备及表征
3)  ferroelectrics [,ferəi'lektriks]
铁电陶瓷
1.
In recent years, as the development of the preparation technology of the ferroelectricsceramics, its application areas continue enhancement.
对一种应用前景较好的铋层状钙钛矿结构铁电陶瓷材料SBTi的研究进展进行了综述,主要对掺杂改性和制备方法方面的工作和成果进行了阐述。
2.
The dielectric properties of ferroelectrics/ferrite cofired multilayer materials were investigated by equivalent circuit analysis.
采用电介质物理学等效电路分析方法研究了Pb(Ni1/3Nb2/3)O3基铁电陶瓷与NiZnCu铁氧体叠层共烧体的介电频率响应,探讨了共烧体界面对介电性能的影响。
3.
The composite material was prepared by mixing Pb(Ni_(1/3)Nb_(2/3))O_3-PbTiO_3-based ferroelectrics and NiCuZn ferrite material.
研究了铁电陶瓷 /铁氧体混合烧结体的相结构与介电性能。
4)  ferroelectric ceramic
铁电陶瓷
1.
Progress in domain switching in ferroelectric ceramics;
铁电陶瓷中电畴翻转研究进展
2.
The experimental research for electric fatigue of ferroelectric ceramic;
铁电陶瓷的电致疲劳实验研究
3.
The recent progress of ferroelectric ceramic films prepared by electrophoretic deposition technique (EPD)is reviewed.
综述了电泳沉积技术在制备铁电陶瓷薄膜方面的最新研究进展,讨论了陶瓷特性、电压、分散剂、热处理时间等因素对电泳沉积铁电薄膜性能的影响。
5)  PZT ceramics
PZT铁电陶瓷
6)  antiferroelectric ceramic
反铁电陶瓷
1.
Manufacture of large displacement antiferroelectric ceramic and its properties;
大位移反铁电陶瓷的制备及其性能(英文)
2.
A new type of large\|displacement actuator called RAINBOW (Reduced And Internally Biased Oxide Wafer) was fabricated by a chemical reduction of PSZT antiferroelectric ceramic.
基于反铁电陶瓷 (PSZT)化学还原制备的 RAINBOW驱动器是一种具有内部应力偏移 ,兼有还原层和氧化层 ,驱动位移较大的新型驱动器。
3.
Performance of the antiferroelectric ceramics which influenced by manufacture process and the phase transition under electric field in La modified Pb(Zr,Sn,Ti)O3 were studied.
研究了制作工艺对于反铁电陶瓷材料性能的影响,以及调压用PLZST在电场诱导下发生反铁电-铁电相变现象,对反铁电陶瓷在不同强度电场下所表现出的极化强度随电压变化进行了测试,记录结果表明,用于在持续电压作用下调压用反铁电陶瓷,对于处于反铁电一铁电开关电场附近(EAFE-FE)的电压波动调压效果最好。
补充资料:反铁电陶瓷
分子式:
CAS号:

性质:主晶相为反铁电体的陶瓷材料,常见的反铁电体为锆酸铅(PbZrO3)或以其为基的固溶体。具有高的相变场强、储能密度和较低的介电常数,低的介质损耗。如Pb0.97La0.02[(Zr59Till)0.7Sn0.3]O3反铁电陶瓷相变场强为34kV/cm(25℃),介电常数峰值2020,居里温度181℃。采用一般电子陶瓷工艺制造。由于其中含铅量较高,常用刚玉坩埚加盖密封烧成,以防止氧化铅高温挥发,烧成温度:1340℃左右。用这类材料制成的抗辐射储能电容器的储能密度可达0.3J/cm3以上,制作时常在瓷片电极附近的绝缘边上涂敷半导釉,可有效地防止绝缘边击穿,提高工作电压。还可用于制作高压电容器、高介电容器,以及换能器(实现电能与机械能转换)等。

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