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1)  stop block
阻块
2)  sheet resistance
方块电阻
1.
Kinetics of the oxidation process of the copper films in the thickness range of 16~22 nm at 140 ℃ was studied by using transmission spectrum and sheet resistance methods.
采用方块电阻和透射光谱两种方法为表征手段,测量16~22nm范围内不同厚度Cu薄膜在140℃下完全氧化所需要的时间,得到了Cu薄膜氧化反应的动力学曲线,并利用X射线衍射(XRD)分析了氧化产物的晶相结构和成分。
2.
The sheet resistances and reflectivity of ultra-thin aluminum and nickel films were measured when they were applied to foam with different thickness.
测量了Al,Ni薄膜的方块电阻及其用于不同厚度泡沫结构的平板反射率,实验结果表明:超薄金属膜结构可以实现谐振吸收;吸波性能由介质材料和金属薄膜共同决定。
3.
Then,the effects of heat treatment and temperature on the chemical composition and sheet resistance of the prepared films were investigated by XRD,EDXS and sheet resistance measurements.
利用X射线衍射和能量散射X射线能谱表征方法,并结合薄膜方块电阻的测定,探讨了热处理方式和热处理温度对薄膜化学组成及薄膜电阻的影响。
3)  prevention block
防阻块
1.
By contrast to several prevention block shaping technology,on the base of discussing on influencing curve rebound factors,the paper proposed rebound value computation methods and problems for reference.
通过对几种防阻块成形工艺对照比较,特别是在对影响弯曲回弹因素进行探讨的基础上,提出弹复值计算方法及模具设计制造应注意的问题,供同行参考。
4)  slippery piece resistance
滑块阻力
5)  check block
阻推块
6)  block resistance
方块电阻
1.
The first is definition of ITO; the second is definition of block resistance; the third is precise calculation of ITO resistance, and the fourth, analyzing the factors affecting the ITO resistance.
论述了ITO、方块电阻的定义及ITO阻值的精确计算 ,并结合实际应用讨论了影响ITO阻值的因素 ,对版图设计和LCD生产的过程控制有一定的借鉴意义。
补充资料:方块电阻
分子式:
CAS号:

性质:在长和宽相等的样品上测量的真空金属化镀膜的电阻。方块电阻的大小与样品尺寸无关。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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