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1)  dependent variable
应变数
2)  logarithmic strain
对数应变
1.
Study on logarithmic strain power hardening constitutional model;
对数应变幂次强化本构模型研究
2.
Forging ratio,relative deformation and logarithmic strain
锻比、相对变形量与对数应变
3.
According to the accurate finite deformation theory based on the logarithmic strain given in part (Ⅰ), a consistent algorithm with first order accuracy is developed.
提出了与基于对数应变的精确有限变形弹塑性理论相应的一致性算法。
3)  strain exponent
应变指数
1.
A m odified em piricalformula for high te mperature plastic deformation has been presented onbasis of our study and the literature : ⒒ε= A ( σ G) (1 + ε) bexp ( - Δ Q R T) , where signs ±representtensileand co mpressive tests ,and n ,b and Δ Q are stress exponent ,strain exponent and activation energy respec tively .
通过实验和总结文献, 提出一个高温塑性形变的经验公式: ⒒ε= A ( σ G) (1 + ε)bexp ( -Δ Q R T) , 其中±分别表示拉伸和压缩实验, 而n , b, Δ Q 分别代表应力指数, 应变指数和塑变活化能。
4)  gauge factor(GF)
应变系数
1.
The effects of the physical and chemical characteristics of the conductive phase on the gauge factor(GF) of the Ru-based thick-film strain resistor;
厚膜电阻材料的物化特性对钌系厚膜电阻应变系数的影响
2.
A new method to increase of the gauge factor(GF) Rubased thick film resistor (TFR) was introduced.
采用粒子尺寸为8nm的纳米Al2O3作为掺杂改性剂,通过选择合适粒径和配比的导电相、玻璃相及烧结工艺,得到了一种GF为13、电阻温度系数小、稳定性良好的钌基厚膜应变电阻,并从厚膜电阻导电机理和纳米材料特性出发,讨论了纳米氧化铝掺杂对厚膜应变电阻应变系数、温度系数、稳定性的影响及其机理。
5)  gauge factor
应变系数
1.
Heavy doped polycrystalline silicon (Poly-Si) nanoflims have great gauge factors (GF) and good temperature characteristics, and they are ideal piezoresistive materials for mechanics sensors.
重掺杂多晶硅纳米薄膜具有较大的应变系数和良好的温度特性,是制作力学量传感器的理想压阻材料。
2.
For the purpose of aiding the development of effective MEMS strain sensors using polysilicon nano-film,we investigate the relationship between the B-doped concentration and the gauge factor of LPCVD-grown polysilicon nano-film and analyze the structure of the film via scanning electron photomicrographs and X-ray diffraction-spectra.
为有效利用多晶硅纳米薄膜研制MEMS压阻器件,本文对LPCVD多晶硅纳米薄膜应变系数与掺硼浓度的关系进行了研究,并利用扫描电镜和X射线衍射实验分析了薄膜的结构特点。
3.
The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained,considering experimental influences of deposition temperature and film thickness on gauge factors.
利用LPCVD制备重掺杂多晶硅薄膜,在0~560℃温度范围内对薄膜的压阻效应进行研究,同时对多晶硅薄膜应变系数随温度的变化,以及薄膜的淀积温度与薄膜厚度对应变系数的影响进行了相关的实验研究。
6)  strain complex number
应变复数
1.
The concepts of stress complex number and strain complex number and inertia complex number are presented in this paper.
文章提出应力复数、应变复数和惯性复数的概念,得到一个复数方程式,即复数莫尔圆方程。
2.
Complex number method for plane stress analysis and plane strain analysis is proposed by means of introducing the concepts of stress complex number and strain complex number in this paper.
通过引入应力复数和应变复数的概念,提出了平面应力分析和平面应变分析的复数方法。
补充资料:半对数坐标
Image:11802736694318756.jpg
半对数坐标

算术坐标系统:就是普通的笛卡儿坐标,横纵的刻度都是是等距的。(举例来说:如果每1cm的长度都代表2,则刻度按照顺序0,2,4,6,8,10,12,14……)

对数坐标:坐标轴是按照相等的指数变化来增加的,(举例来说:如果每1cm代表10的1次方增加,则坐标轴刻度依次为1,10,100,1000,10000……)

半对数坐标系统:只有一个坐标轴是对数坐标,另一个是普通算术坐标。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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