1) thermodynamic critical field
热力学临界磁场
2) critical magnetic field
临界磁场
1.
The binding energies of low excited states and the critical magnetic fields at which D- states changed from unbound states to bound states are presented too.
用超球坐标数值计算近似方法解二维D-中心在磁场中的薛定锷方程,得到了基态能,计算了低激发态的束缚能同时得到了低激发态由非束缚态变为束缚态的临界磁场值。
2.
On the basis of GL theory,this paper gives the Gibbs function of DSC system and the relation between the critical magnetic field of DSC system in case of microwave irradiation and both the coherence length and the thickness of dielectric under considering the Josephson current.
在ＧＬ理论基础上，考虑Ｊｏｓｅｐｈｓｏｎ电流，给出ＤＳＣ系统在微波辐照下的Ｇｉｂｂｓ函数，并得出临界磁场与绝缘层的厚度、相干长度的关
3.
The unstable magnetization changes discontinuously when across a critical value,corresponding to a critical magnetic field.
这个不稳定的磁化强度对应于一个临界磁场,低温时外场变化经过临界磁场时磁化强度发生突变。
3) thermodynamic critical magnetic flux density
热力学超导临界磁通[量]密度
4) Upper critical field
上临界磁场
5) upper critical magnetic field
高临界磁场
6) lower critical field
下临界磁场
补充资料：热力学临界磁场（`H_c`）（thermodynamiccriticalmagneticfield($H_c$)）
热力学临界磁场（`H_c`）（thermodynamiccriticalmagneticfield($H_c$)）
见“凝聚能”。Hc也可通过可逆磁化曲线M=M(H)求出的面积值来表示：
$int_0^{H_c}\mu_0MdH=\frac{1}{2}\mu_0H_c^2$
这里M是磁化强度，μ0是真空磁导率。Hc(T)与温度近似遵照如下关系：
$H_c(T)=H_c(0)[1-(\frac{T}{T_c})^2]$
在GL理论中
$H_c(T)=\alpha(T)//(\mu_0\beta)^{1/2}$
α(T)和β是GL自由能密度的展式系数。在BCS理论中，
当T→0时
Hc(T)=Hc(0)[1-(1.06)(T/Tc)2]，
当T→Tc时
Hc(T)=(1.74)Hc(0)(1-T/Tc)，
而
$H_c(0)=[4\piN(0)\Delta^2(0)]^{1/2}
Hc(0)，N(0)和Δ(0)分别是T=0K时的热力学临界磁场强度，态密度和能隙。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条