1) n-well diode
n阱二极管
2) MQW LED
多量子阱发光二极管
3) multi-quantum well laser diodes
多量子阱激光二极管
1.
The investigated multi-quantum well laser diodes are quite resistive to gamma-ray irradiation because their P-I characteristics,I-V characteristics and central wavelength have little changes.
本工作进行多量子阱激光二极管及其组件的γ辐照实验研究,总剂量(以Si计)达5。
4) P-i-N diodes
P-i-N二极管
5) AlGaN P-I-N photodiodes
AlGaNP-I-N二极管
6) p-n junction diode
p-n结二极管
1.
Boundary alternating current characteristics of an ideal p-n junction diode;
p-n结二极管结区边界附近的交流电特性
补充资料：多量子阱(见量子阱)
多量子阱(见量子阱)
multiple quantum well
多t子阱multiple quanturn well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条