1) photo electromotive force
光电电动势
2) photoelectromotive foree
光电动势
3) photo-induced voltage
光生电动势
1.
The photo-induced voltage between the back etching and edge etching silicon were compared, explaining the difference by means of the theory of energy bands.
采用正面无保护的背腐蚀方法分离p-n结,用SEM图观察了背腐蚀后硅片表面形貌的变化,对背腐蚀与刻边分离p-n结样品的光生电动势进行了比较,用能带理论对其差别做了深入的解释。
4) electrokinetic potential
电动电势
5) electrokinetic potential (ζpotential)
电动电势(ζ电势)
6) optovoltage
光生电势
