An example Si-doped GaAs(T=300 K)was given,the doping concentration and Fermi level was calculated by Fermi integral accurate value and Boltzmann distribution,the results show that when Nd<1.

For the grain-boundary potential bather model with acceptor defect layers on grain surface, the spatal variation of the steady-state quasi-Fermi level near grain boundary is calculated in the diffusion limit For an n-type polystalline semiconductor,most of the variation occurs in the near grain boundary region on the revere-biased side.

On the relation between Fermi energy of low-dimensional electron gas and temperature;