说明:双击或选中下面任意单词,将显示该词的音标、读音、翻译等;选中中文或多个词,将显示翻译。
您的位置:首页 -> 词典 -> 施主杂质能级
1)  donor impurity level
施主杂质能级
2)  acceptor impurity level
受主杂质能级
3)  donors [英]['dəunə]  [美]['donɚ]
施主杂质
1.
BaTiO3 ceramics were prepared by conventional solid state processing with MnCO3 and Co2O3 doped as acceptor,La2O3,Nb2O5 and Bi2(SnO3)3 doped as donors.
通过传统的球磨工艺,分别以MnCO3、Co2O3为受主杂质,La2O3、Nb2O5、Bi2(SnO3)3为施主杂质对BaTiO3陶瓷进行掺杂。
2.
The experiment shows that the dielectric properties of BaTiO3 ceramics are related with the rate of donors n and acceptors p.
通过传统的球磨工艺,以Co2O3为受主杂质和La2O3、Nb2O5、Bi2(SiO3)3为施主杂质,对BaTiO3系陶瓷进行掺杂。
4)  donor impurity
施主杂质
1.
The ground state binding energy of a polaron bound to a donor impurity near the interface of a semiconductor heterojunection is investigated with a modified LLP variational method by considering the influence of a triangular potential,the electron phonon and impurity phonon interaction,including the effect of half space bulk longitudinal and interface optical phonon modes.
对半导体单异质结系统 ,引入三角势近似异质结势 ,考虑电子、杂质与声子的相互作用 ,利用改进的 LLP变分法讨论在界面附近束缚于正施主杂质的极化子基态能量 。
2.
A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterojunction by considering the influence of a triangular potential and the screened Coulombic impurity potential.
对半导体单异质结系统 ,引入三角势近似异质结势 ,考虑电子对杂质库仑势的屏蔽影响 ,利用变分法讨论在界面附近束缚于正施主杂质的单电子基态能量 。
5)  donor site
施主能级
6)  impurity level
杂质能级
1.
New method of calculating the probability function of carriers occupying the impurity level;
一种计算载流子占据杂质能级的概率的新方法
补充资料:大施主
【大施主】
 (术语)于一切之人行大施者。无量寿经上曰:“我于无量劫不为大施主,普济诸贫穷,誓不成正觉。”
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条