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1)  photomultiplier cell
光电倍增晶体管
2)  current multiplication type transistor
电流倍增型晶体管
3)  PMT
光电倍增管
1.
Study of EMI 8" PMTs for Reactor Neutrino Experiment;
反应堆中微子实验中的光电倍增管性能研究(英文)
2.
Means of Selecting a PMT Fit for Photon Counting System
光子计数系统中光电倍增管的选取方法
3.
Working Circuit of PMT in Photon Counting Systems
光子计数用光电倍增管的外围工作电路
4)  photomultiplier [英][,fəutəu'mʌltiplaiə]  [美][,foto'mʌltə,plaɪɚ]
光电倍增管
1.
Determination of photomultiplier working points in natural gamma raylogging instruments;
自然伽玛测井仪光电倍增管工作点的确定方法
2.
Measuring and study for photoelectron spectrum of the photomultiplier;
光电倍增管的光电子幅度谱测试研究
3.
Timing characteristic of photomultiplier studied on dynode signals;
光电倍增管倍增极信号定时性能的研究
5)  Photomultiplier tube
光电倍增管
1.
Measurement of linearity and time response parameters for photomultiplier tube;
光电倍增管线性特性、时间特性参数调试
2.
Study of the relationship photomultiplier tube gain with sum work voltage;
两种光电倍增管增益与总工作电压的关系研究
3.
Application of photomultiplier tube in detection of cement grout density;
光电倍增管在检测水泥浆液密度中的应用
6)  photomultiplier tubes
光电倍增管
1.
Study on the response characteristics of photomultiplier tubes measuring tens of milliseconds scale broad pulsed signals;
光电倍增管对数十ms级宽脉冲信号的响应特性研究
2.
<Abstrcat> The objects, the criteria, the contents, the methods, and the data processing methods of property Test on photomultiplier tubes used in nuclear measurement are stated, the testing results of various photo multiplier tubes used in nuclear measurement proved that these methods can meet the requirements of developing and manufacturing of nuclear measurement instruments.
 从测试的目的、原则、内容、方法、以及测试数据的处理方法5个方面,论述了核测量用光电倍增管的性能测试方法。
3.
The technical characteristics and the state-of-art of photomultiplier tubes for all kinds of applications are described in this paper- Recent advances in the research and development of photomultiplier tubes are also commented on.
介绍了应用于各领域的光电倍增管的技术特点和发展概况。
补充资料:晶体管-晶体管逻辑电路
晶体管-晶体管逻辑电路
transistor-transistor logic
    集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路(DTL)中的二极管,改为使用多发射极晶体管而构成。TTL电路于1962年研制成功,基本门电路的结构和元件参数,经历了3次大的改进。同DTL电路相比,TTL电路速度显著提高,功耗大为降低。仅第一代TTL电路产品,就使开关速度比DTL电路提高5~10倍。采用肖特基二极管的第三代TTL电路,开关时间可缩短到3~5纳秒。绝大部分双极型集成电路,都是TTL电路产品。
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