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1)  Multi-quantum-well
多层量子阱
1.
Light-emitting Thin Films and Devices Based on Silicon-rich Nitride and Nano-silicon Multi-quantum-well Structures
富硅氮化硅和纳米硅多层量子阱硅基发光薄膜与器件
2)  Multiple Quantum wells
多量子阱
1.
Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering;
反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析
2.
GaAs/AlGaAs(110)multiple quantum wells(MQWs)were grown by solid source molecular beam epitaxy(MBE)with a valved arsenic cracker cell.
采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/Al GaAs多量子阱结构。
3.
The DR spectra of GaAs/Al 0 25 Ga 0 75 As multiple quantum wells (MQWs) samples were measured experimentally.
利用振动光束差分反射测试系统 ,获得了 Ga As/Al Ga As多量子阱材料的 DR谱 ,初步分析了 DR信号的产生机制 。
3)  multi-quantum well
多量子阱
1.
Analyzing the unstable reason of GaN-based blue light LED peak wavelength,it was the quantum restrictionStark effect caused by the multi-quantum well area.
分析了引起GaN基蓝光LED峰值波长不稳定的原因,它是由多量子阱区内极化效应引起的量子限制斯塔克效应造成的。
2.
To verify the direct-gap transition of a SiGe multi-quantum well and grope for its application in thermophotovoltaic cells,a high quality SiGe multi-quantum well is grown by our UHV-CVDⅡ system.
为了验证SiGe多量子阱的能带向直接带隙结构转变[1]和进一步探索其在热光电池领域的应用,采用先进的超高真空化学气相沉积系统生长出高质量的SiGe多量子阱外延层,并对其进行多次反射红外线吸收谱的测量。
3.
Based on the logarithmic relation of gain on carrier density,the rate equations are described for multi-quantum well of vertical cavity surface emitting lasers(VCSELs) taking into account the influence of nonradiative depopulation rate.
采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSEL)的速率方程。
4)  Multi quantum well
多量子阱
1.
The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
2.
Multi quantum well interface quality is one of key factors that affect device performance.
利用金属有机气相沉积技术生长InGaAsP/InP多量子阱结构,通过改变生长程序,得到了优化的陡峭量子阱界面。
3.
For cases of a Si∶H film and a Si∶H/ a SiN x∶ H  multi quantum well structure on the quartz substrates irradiated by the KrF pulsed excimer laser, we analyzed the effect of film thickness, laser energy density and the ratio of sublayers′ thicknesses of a Si∶H/ a SiN x∶ H  MQW structure on the temperature distribution and crystall.
结合KrF准分子脉冲激光对淀积在熔凝石英衬底上的a-SiH薄膜以及a-SiH/a-SiNxH多量子阱结构材料的热退火处理,分析了膜厚、激光能量密度以及a-SiH/a-SiNxH多量子阱结构材料中的子层厚度比对温度场性质及a-SiH薄膜的晶化效果的影响。
5)  multiple quantum well
多量子阱
1.
Quasi-vectorial analysis of the optical characteristics of rib waveguides and directional couplers based on InGaAs/InAlAs multiple quantum wells;
InGaAs/InAlAs多量子阱脊形波导及定向耦合器光波特性准矢量分析
2.
Research on the Electronic Properties of InAlGaN Multiple Quantum Well Structures;
InAlGaN材料系多量子阱结构电子学特性的研究
3.
We have investigated the electric field optical modulation of GaAs/AlGaAs multiple quantum well(MQW).
研究了GaAs/AlGaAs多量子阱结构的电场光调制特性,测量了光反射谱、光电流谱和光电流电压特性。
6)  MQW
多量子阱
1.
High Quality InGaAsP MQW by Selective Area Growth;
选择区域生长高质量InGaAsP多量子阱材料
2.
The Exciton Absorption and Light Modulation Characteristics of MQW Light Switch Devices;
多量子阱光开关器件的激子吸收及光调制特性
3.
CALCULATION OF Ge_xSi_(1-x)/Si MQW PHOTODETECTOR WAVEGUIDE STRUCTURE;
GeSi/Si多量子阱红外探测器波导结构的理论计算
补充资料:多量子阱(见量子阱)


多量子阱(见量子阱)
multiple quantum well

多t子阱multiple quanturn well见量子阱。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条