1) Cr-doping ZnO thin films
Cr掺杂ZnO薄膜
1.
Effect of substrate temperature on structure and transmittance of Cr-doping ZnO thin films
衬底温度对Cr掺杂ZnO薄膜结构和透过率的影响
2) doped ZnO thin film
掺杂ZnO薄膜
1.
Sb_2O_3-doped ZnO thin film was prepared by RF magnetron sputtering technique.
采用RF磁控溅射技术制备了Sb2O3掺杂ZnO薄膜,通过X射线光电子能谱仪(XPS)、X射线衍射仪(XRD)和紫外-可见光(UV-Vis)分光光度计研究了Sb2O3对ZnO薄膜结构和光吸收性能的影响。
3) In-doped ZnO thin films
In掺杂ZnO薄膜
4) Al-doped zinc oxide(ZAO) film
Al掺杂ZnO(ZAO)薄膜
5) Al-doped ZnO thin films
Al掺杂ZnO薄膜
1.
Multifractal study of atomic force microscopic images of Al-doped ZnO thin films;
Al掺杂ZnO薄膜原子力显微图像的多重分形研究
2.
Surface topography,optical transmittance spectra and photoluminescence spectrum of Al-doped ZnO thin films,prepared by sol-gel method,were analyzed by atomic force microscope,UV-visible spectrophotometer and fluorescent spectrometry.
用原子力显微镜、紫外-可见分光光度计和荧光光谱仪观察采用溶胶-凝胶法制备的Al掺杂ZnO薄膜的表面形貌、透射光谱和光致发光谱。
6) Co-doped ZnO films
Co掺杂的ZnO薄膜
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条