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1)  boron carbide thin films
碳化硼薄膜
1.
The results of XRD show that the crystallization of the boron carbide thin films meliorate gradually with increasing substrate temperature and crystalloid of the boron carbide thin films are got at more than 150 ℃ of the substrate temperature.
采用电子束蒸发技术制备碳化硼薄膜,利用X射线衍射(XRD)分析了薄膜的结构,测量了薄膜的X射线光电子能谱(XPS),并利用原子力显微镜(AFM)对薄膜进行表面分析。
2)  boron doped carbon thin film
掺硼碳薄膜
3)  BCN thin films
硼碳氮薄膜
1.
Deposited BCN thin films were characterized by Fourier transform infrared spectroscopy(FTIR),Raman spectroscopy(RS).
56 MHz)磁控溅射法沉积硼碳氮薄膜,得到的硼碳氮薄膜可用红外,拉曼表征。
2.
The BCN thin films have been mainly synthesized by chemical vapor deposition (CVD).
近几年来,硼碳氮薄膜的制备和性能研究已逐步成为国际上薄膜研究的热点。
4)  BN film
氮化硼薄膜
1.
6 while deposited BN films,and the antifriction effect is obvious.
采用射频磁控溅射法在T10碳素工具钢表面制备了氮化硼薄膜;研究了在基材和薄膜之间化学镀N i-P中间层对薄膜结合力的影响;使用摩擦试验机对基材和镀膜后的试样进行了摩擦性能检测;通过划痕试验进行了结合强度试验。
2.
With optical microscope, friction and wear spectrometer and scratch spectrometer, the influence of the parameters of sputtering time, sputtering power and interface layer on the film was studied The results showed that the friction factor of BN film was about half of that of the steel based materials, and the cohesion between film and substrate could obviously be.
采用射频磁控溅射方法在T10钢表面获得了氮化硼薄膜。
3.
BN films, synthesized by ion beam assisted deposition, were analysed by RBS,AES, IR spectra and TEM.
用离子束辅助沉积(IBAD)技术合成氮化硼薄膜,红外吸收谱和透射电镜的观测结果显示,薄膜含有c—BN和h—BN相薄膜Knoop硬度值高达35GPa。
5)  LaB_x thin film
硼化镧薄膜
1.
Lanthanum hexaboride(LaB6) has been widely used for all kinds of large density electron source as it has unique emission characteristics,but the preparation of LaB_x thin films has not deeply studied.
LaB6阴极凭借其优良的发射特性已广泛应用于各种大电流密度的电子源,但是硼化镧薄膜的制备方法以及其发射特性还未得到深入的研究,本文对在Ta金属基底材料上使用电子束蒸发法得到的硼化镧薄膜表面型貌使用扫描电子显微镜进行了观测,使用XPS紫外光电子能谱仪测量了其原子比,薄膜显示出良好的发射特性,利用热发射测量逸出功,利用Richardson直线法计算得到薄膜材料的逸出功为2。
6)  boron nitride thin film
氮化硼薄膜
1.
Amorphous boron nitride thin film was prepared on the titanium coated ceramic substrate by pulsed laser deposition technique (PLD).
利用脉冲激光沉积 (PLD)技术在镀钛的陶瓷衬底上制备出了非晶态氮化硼薄膜 ,借助于X射线衍射(XRD)、扫描电子显微镜 (SEM )及Raman光谱分析了该薄膜的结构 ,并研究了薄膜场致电子发射特性 ,阈值电场为4 6V μm ,当电场为 9V μm时 ,电流密度为 5 0 μA cm2 。
补充资料:碳化硼
      分子式为B4C,熔点为2350℃,硬度低于金刚石等,高于刚玉和碳化硅,常用作磨料。工业用碳化硼是在电弧炉或电阻炉中用碳素材料还原硼酸制得的,为深灰至黑色带金属光泽的粉末,含B4C94%以上,其他为游离硼、游离碳和少量Fe、Si、Al2O3、CaO。碳化硼作为磨料,用于研磨和抛光硬质合金、宝石和其他精密零件。碳化硼也可用作喷砂嘴、过滤器、化学器皿、修整工具、量规、测头和压模等的耐磨涂层,还可用作原子能工业中的中子吸收剂。
  

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