Considering some factors of p-GaN,including comparatively thick surface oxide layer,relatively big ohmic contact resistance and failed ultraviolet enhanced wet etching caused by downward band-bending at the p-GaN/electrolyte interface,the traditional wet etching of p-GaN and ultraviolet enhanced wet etching of n-GaN are expounded emphatically.

The effects of ultraviolet light intensity on the structure and properties of HDPE were studied.

Spectral response measurement of UV image intensifier;