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1)  ∑3 boundary
∑3晶界
1.
It is commonly accepted that for fcc metals of low to medium stacking fault energy metals,including Ni and many Ni-alloys,the most important CSL boundary for the GBE process is a∑3 boundary,the occurrence of which is dominated by the formation of annealing twins.
996%的金属Ni在低温再结晶过程中∑3晶界的演化。
2)  ∑3~n boundary
∑3~n晶界
3)  incoherent E3 boundary
非共格∑3晶界
4)  ∑3 sub-grain boundary structure
∑3亚晶界结构
1.
The relationship between damage cavity density and percent composition of ∑3 sub-grain boundary structure in material was determined and the predicted result were validated.
利用该方法建立损伤空洞密度与∑3亚晶界结构百分数关系曲线,并对预测的结果进行验证。
5)  incoherent∑3 grain boundary
作共格∑3晶界
6)  grain boundary
晶界
1.
Dynamic process simulation of solute grain boundary segregation;
溶质原子晶界偏聚动力学过程的数值模拟
2.
Methodological probe into grain boundary etching of molybdenum disilicide based materials;
二硅化钼基材料的晶界腐蚀方法探讨
补充资料:[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式:C16H16ClN3O3S
分子量:365.5
CAS号:26807-65-8

性质:暂无

制备方法:暂无

用途:用于轻、中度原发性高血压。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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