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1)  infrared transmission
红外透射率
1.
Effect of the polished surface defects of diamond film on infrared transmission
金刚石膜抛光表面缺陷对其红外透射率的影响
2)  FTIR radiation transmittance
红外辐射透过率
3)  infrared transmission
红外透射
1.
the SEM results of etched pit density (EPD) of the radiated GaAs wafer by preferential etching with KOH melt show the "W"linear profiles of lightly chromium doped GaAs crystals; The infrared transmission results of optical processing GaAs samples show that the effect of EPD on infrared transmission can be neglected if the value of.
红外透射测量结果表明:当位错密度不太高时,位错引入的电子态的体密度低,位错的径向分布对红外透过率的影响很小;当位错密度很高时,其对红外透过率的影响不可忽视。
2.
Using the infrared transmission theory, which is to say that the bonding part of thesample can make the light pass, and the un-bonding part of the sample will block the light, at thesame time, the unique method of cold lamp-house is used to manufacture the instrument of testingthe wafer bonding quality in order to select the high quality one for the next technical research.
利用红外透射原理,即根据键合晶片中键合部分可以透光而未键合部分几乎不能透光的原理,同时采用冷光源的独特方法构建了键合质量测试平台以用于初步筛选符合下一步工艺探索的高质量键合晶片。
3.
It was observed that, after boiling the samples in water, the infrared transmittance increased, the absorption edge was moved to the short wave direction and the absorption below the energy gap was reduced, and that the range of infrared transmission was narrowed.
采用红外透射测量观测了氢钝化对Hg_(1-x)Cd_xTe晶片的影响,用分层模型计算了晶片透射率,分析了氢钝化增加其透射率、吸收边向短波方向移动、低于禁带宽度能量的吸收降低、透过范围减小的原因。
4)  Near-Infrared Transmission
近红外透射
1.
Soybean Whole Kernels Analysis by Near-Infrared Transmission Technique;
近红外透射技术分析大豆籽粒
5)  far infrared transmittance spectra(FIT)
远红外透射
6)  FTIR
红外透射谱
1.
Fourier transform infrared spectrum(FTIR) and X-ray photoelectron spectroscopy(XPS) are used to analyze the interface of Si/Si bonding.
采用傅里叶红外透射谱(FTIR)对Si/Si键合界面进行了研究,结果表明,高温退火样品的界面组分为Si和O,无OH和H网络存在。
补充资料:红外透过石英玻璃
分子式:
CAS号:

性质:在近红外波长范围具有良好透过率的石英玻璃。应用于光谱波长范围为26~350μm。用优质水晶或优质硅石为原料,真空加压法等制成毛坯,经退火加工成各种光学零件。由于羟基含量较低,因此红外透过率较好。可作红外探测跟踪系统、精密光学仪器零件、工业窑炉的观察镜等。

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