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1)  PbSe/PbSrSe multiple quantum wells
PbSe/PbSrSe多层量子阱(MQWs)
2)  multiple quantum wells(MQWs)
多量子阱(MQWs)
1.
36N multiple quantum wells(MQWs)structure for deep ultraviolet emission has been grown on sapphire by metalorganic chemical vapor deposition(MOCVD).
36N多量子阱(MQWs)结构。
3)  Multi-quantum-well
多层量子阱
1.
Light-emitting Thin Films and Devices Based on Silicon-rich Nitride and Nano-silicon Multi-quantum-well Structures
富硅氮化硅和纳米硅多层量子阱硅基发光薄膜与器件
4)  PbSe quantum dots
PbSe量子点
5)  Multiple Quantum wells
多量子阱
1.
Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering;
反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析
2.
GaAs/AlGaAs(110)multiple quantum wells(MQWs)were grown by solid source molecular beam epitaxy(MBE)with a valved arsenic cracker cell.
采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/Al GaAs多量子阱结构。
3.
The DR spectra of GaAs/Al 0 25 Ga 0 75 As multiple quantum wells (MQWs) samples were measured experimentally.
利用振动光束差分反射测试系统 ,获得了 Ga As/Al Ga As多量子阱材料的 DR谱 ,初步分析了 DR信号的产生机制 。
6)  multi-quantum well
多量子阱
1.
Analyzing the unstable reason of GaN-based blue light LED peak wavelength,it was the quantum restrictionStark effect caused by the multi-quantum well area.
分析了引起GaN基蓝光LED峰值波长不稳定的原因,它是由多量子阱区内极化效应引起的量子限制斯塔克效应造成的。
2.
To verify the direct-gap transition of a SiGe multi-quantum well and grope for its application in thermophotovoltaic cells,a high quality SiGe multi-quantum well is grown by our UHV-CVDⅡ system.
为了验证SiGe多量子阱的能带向直接带隙结构转变[1]和进一步探索其在热光电池领域的应用,采用先进的超高真空化学气相沉积系统生长出高质量的SiGe多量子阱外延层,并对其进行多次反射红外线吸收谱的测量。
3.
Based on the logarithmic relation of gain on carrier density,the rate equations are described for multi-quantum well of vertical cavity surface emitting lasers(VCSELs) taking into account the influence of nonradiative depopulation rate.
采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSEL)的速率方程。
补充资料:PBS
分子式:
CAS号:

性质:液渗透压近似于生理要求又有较强pH缓冲能力的磷酸盐溶液,有不同的配方。常根据有无钙镁离子分为两类。常用的Dulbecco磷酸缓冲液(PBSA)的配方如下(g/L):KCl,0.20;KH2PO4,0.20;NaCl,8.00;Na2HPO4·7H2O,2.16。

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